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Product Detailed Parameters
- Description：JFET N-CH 25V SOT23
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：25 V
- Current - Drain (Idss) @ Vds (Vgs=0)：10 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：4 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：30pF @ 10V (VGS)
- Resistance - RDS(On)：18 Ohms
- Power - Max：250 mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23 (TO-236AB)
- Grade：-
- Qualification：-
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Overview
The PMBFJ110,215 is an N-channel junction FET manufactured by NXP Semiconductors. It is housed in a SOT-23 plastic surface-mounted package with three leads. The device features symmetrical drain and source connections, allowing for interchangeability. Key electrical parameters include a maximum drain-source voltage of ±25 V and a gate-source breakdown voltage of -25 V. At zero gate voltage, the drain-source on-state resistance is specified at a maximum of 18 Ω. The input capacitance is typically 50 pF at 1 MHz with zero gate bias.
Feature Summary
- Symmetrical design enabling interchangeable drain and source connections
- Capable of high-speed switching operations
- Low on-state resistance at zero gate voltage
Applications
- Analog switches
- Choppers and commutators
- Audio amplifiers
Procurement Notes
Verify the specific ordering suffix to confirm the packaging format, such as cut tape or reel quantities. Confirm the manufacturing origin code marked on the component body matches the intended production site. Ensure the data sheet revision aligns with current product specifications before finalizing procurement orders.
Selection Notes
Select this component when a compact N-channel JFET with interchangeable terminals is required. The low on-state resistance makes it suitable for signal routing applications. Verify that the ±25 V voltage ratings meet the circuit requirements. Consider the thermal resistance characteristics for heat dissipation needs in the target application environment.
Part Context
This part belongs to the PMBFJ108/109/110 series of N-channel junction FETs from NXP Semiconductors. All variants share the same SOT-23 package and general description but differ in specific electrical characteristics like on-resistance and cut-off voltage. The series is designed for general-purpose analog switching and audio applications.
Replacement Considerations
PMBFJ108 and PMBFJ109 are direct siblings within the same datasheet. They share the SOT-23 package and pinout. Substitution requires verifying that the lower on-resistance of the alternative does not conflict with circuit impedance requirements.
FAQ
Are the drain and source pins fixed?
No, the drain and source connections are interchangeable due to the symmetrical design of the device.
What is the maximum drain-source voltage rating?
The maximum DC drain-source voltage is rated at ±25 V.
Does the device support partial power-down modes?
The provided datasheet does not specify I_OFF circuitry or partial power-down capabilities for this specific JFET model.
