PMBT5551-QR

Single Bipolar Transistors Overview

The PMBT5551-QR is an NPN high-voltage transistor manufactured by Nexperia USA Inc. It is housed in a small SOT23 (TO-236AB) surface-mounted plastic package with three terminals. The device supports a maximum collector-emitter voltage of 160 V and a continuous collector current of 300 mA. Peak collector current reaches 600 mA, while total power dissipation is rated at 250 mW. The transition frequency is typically 300 MHz at 10 mA collector current. Junction temperature ranges from -65 °C to +150 °C.

Single Bipolar Transistors Feature Summary

• Qualified according to AEC-Q101 standards for automotive applications
• High voltage capability up to 160 V collector-emitter voltage
• Low current operation with a maximum rating of 300 mA

Single Bipolar Transistors Applications

• General purpose switching
• Automotive electronics systems

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'QR' against official Nexperia documentation to confirm reel packaging specifications and manufacturing site codes. Ensure the component matches the exact data sheet version dated 21 July 2022. Confirm that the ordering information aligns with the SOT23 package dimensions and marking codes provided in the official product data sheet before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high-voltage NPN switching within a compact SOT23 footprint. The AEC-Q101 qualification makes it suitable for automotive environments where reliability under stress is critical. Consider the 160 V breakdown voltage and 300 mA current limits to ensure adequate headroom for the intended load conditions and thermal management requirements.

Single Bipolar Transistors Part Context

This part belongs to the PMBT5551-Q series of NPN high-voltage transistors produced by Nexperia. The series utilizes a standard SOT23 plastic package designed for surface-mount technology. The product line targets general-purpose applications with a specific emphasis on automotive sectors due to its rigorous qualification standards and robust electrical characteristics.

Single Bipolar Transistors Replacement Considerations

Consult official Nexperia substitution guides for verified equivalents. Cross-reference pinouts and electrical parameters carefully to ensure compatibility with existing PCB footprints and circuit designs without modifying the layout.

Single Bipolar Transistors FAQ

What is the maximum collector-base voltage for the PMBT5551-Q?

The maximum collector-base voltage is 180 V with the emitter open.

Is the PMBT5551-Q suitable for automotive use?

Yes, the device is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.

What is the typical transition frequency of this transistor?

The typical transition frequency is 300 MHz when measured at a collector current of 10 mA and a collector-emitter voltage of 10 V.