PMCM650CUNEZ

$0.17

Description：MOSFET 20V
Series：*

SKU:0a0bd212781a Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 20V
Series：*
Mfr：Nexperia USA Inc.
Package：Bulk
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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PMCM650CUNEZ

Overview

The PMCM650CUNEZ is a dual N-channel enhancement mode common-drain Field-Effect Transistor utilizing Trench MOSFET technology. It features a 20 V source-source voltage rating and supports up to 5.3 A continuous source current at 25 °C. The device operates within a junction temperature range of -55 °C to 150 °C. Key electrical parameters include a maximum on-state resistance of 52 mΩ at VGS = 4.5 V, a gate-source threshold voltage of 0.9 V max, and total gate charge of 13 nC. It is housed in a compact 6-WLCSP package measuring 1.48 x 0.98 mm.

Feature Summary

Common-drain configuration enabling bi-directional current flow
Ultra-small WLCSP footprint for space-constrained designs
Integrated ESD protection exceeding 2 kV HBM

Applications

Loadswitch
Battery Protection
Battery Management

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging and marking codes. Confirm component availability status as distribution channels may list obsolete or end-of-life inventory. Ensure compliance with RoHS3 and REACH requirements by checking the most recent environmental declaration. Validate that the received part matches the datasheet revision and pinout specifications before integration.

Selection Notes

Select this component for applications requiring bidirectional power switching in minimal board space. The low threshold voltage facilitates drive from low-voltage logic interfaces. Evaluate thermal performance based on PCB copper area, as power dissipation capabilities depend heavily on mounting pad size. Consider the common-drain topology for its specific current flow characteristics compared to standard source-drain configurations.

Part Context

This device belongs to the PMCM650 series of WLCSP-packaged MOSFETs from Nexperia. It utilizes Trench MOSFET technology to achieve low on-resistance in a wafer-level chip-size package. The series is designed for portable electronics and battery-powered systems where small form factors are critical. The common-drain arrangement distinguishes it from standard single-ended FETs.