PMCXB1000UEZ

$0.51

Description：MOSFET N/P-CH 30V 0.59A 6DFN
Series：-

SKU:f5099c5cded7 Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 0.59A 6DFN
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：590mA (Ta), 410mA (Ta)
Rds On (Max) @ Id, Vgs：670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.05nC @ 4.5V, 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：30.3pF @ 15V, 43.2pF @ 15V
Power - Max：285mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-XFDFN Exposed Pad
Supplier Device Package：DFN1010B-6
Grade：-
Qualification：-

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PMCXB1000UEZ

Overview

The PMCXB1000UE is a complementary N/P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It features a leadless DFN1010B-6 (SOT1216) package measuring 1.1 x 1.0 x 0.37 mm. The N-channel device has a drain-source voltage of 30 V and typical on-state resistance of 550 mΩ at VGS=4.5 V. The P-channel device also supports 30 V with a typical on-state resistance of 1.2 Ω at VGS=-4.5 V. Both channels exhibit a low threshold voltage of 0.7 V and provide electrostatic discharge protection exceeding 2 kV HBM.

Feature Summary

Trench MOSFET technology for enhanced performance
Very low threshold voltage suitable for portable applications
Leadless ultra-small and ultra-thin surface-mount package
High electrostatic discharge protection capability

Applications

Relay driver
High-speed line driver
Level shifter
Power management in battery-driven portables

Procurement Notes

Verify the component marking code 'B 101' to confirm authenticity against the official Nexperia datasheet. Ensure the ordering suffix matches the standard DFN1010B-6 configuration. Confirm that the application environment respects the absolute maximum ratings, particularly regarding junction temperature limits and thermal dissipation constraints defined in the product specification.

Selection Notes

Select this component when space-constrained designs require a complementary switch pair in a minimal footprint. The low threshold voltage makes it appropriate for logic-level control in battery-operated systems. Consider the specific on-resistance differences between the N-channel and P-channel devices when designing asymmetric drive circuits or load switches requiring balanced performance characteristics.

Part Context

This part belongs to Nexperia's portfolio of small-signal MOSFETs designed for high-density PCB layouts. The DFN1010B-6 package is optimized for thermal efficiency despite its miniature dimensions. It serves as a compact solution for power switching tasks where traditional packages would exceed available board area constraints in modern consumer electronics.