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The PMDPB28UN,115 is a dual N-channel enhancement mode Field-Effect Transistor manufactured by Nexperia. It utilizes Trench MOSFET technology within an ultra-thin DFN2020-6 (SOT1118) leadless package measuring 2 x 2 x 0.65 mm. The device features an exposed drain pad for superior thermal conduction. Key electrical parameters include a drain-source voltage of 20 V and a gate-source voltage range of -8 V to 8 V. At 25 °C, the continuous drain current reaches 5.8 A with a maximum on-state resistance of 37 mΩ at VGS = 4.5 V. Total power dissipation is rated at 510 mW in free air and up to 1200 mW with a dedicated drain mounting pad.
Verify component authenticity through official Nexperia channels or authorized distributors. Confirm the marking code '1P' matches the datasheet specifications. Ensure the ordering suffix ',115' corresponds to the required reel packaging format. Cross-reference the revision history to ensure the latest product data sheet version is utilized during design implementation.
Select this component when space constraints require an ultra-thin footprint under 1 mm height. Evaluate thermal requirements against the 510 mW free-air rating or utilize the exposed pad for higher dissipation. Verify that the 20 V breakdown voltage exceeds the maximum circuit operating voltage. Check gate drive levels to ensure the 37 mΩ RDS(on) specification is met at the intended VGS.
This device belongs to the Nexperia Trench MOSFET series, formerly part of the NXP Standard Product business. It serves as a compact solution for power management in consumer electronics and industrial applications. The transition from NXP branding to Nexperia reflects the separation of the standard product division into a specialized discrete and logic semiconductor supplier.
Consult the Nexperia portfolio for alternative dual N-channel MOSFETs in the DFN2020-6 package. Verify pinout compatibility and thermal characteristics before substitution. No direct public substitute part numbers are confirmed in the provided documentation.