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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 4A 6HUSON
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4A
- Rds On (Max) @ Id, Vgs：40mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：660pF @ 10V
- Power - Max：490mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：6-HUSON (2x2)
- Grade：-
- Qualification：-
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Overview
The PMDPB30XN,115 is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It features a DFN2020-6 (SOT1118) leadless package measuring 2 x 2 x 0.65 mm with an exposed drain pad for thermal conduction. Key electrical parameters include a drain-source voltage of 20 V and a continuous drain current of 5.3 A at 25 °C. The typical on-state resistance is 32 mΩ at VGS = 4.5 V and ID = 3 A. Total gate charge is typically 14.4 nC, with turn-on delay of 4 ns and fall time of 16 ns. Operating junction temperature ranges from -55 °C to +150 °C.
Feature Summary
- Dual N-channel configuration in a compact, leadless ultra-thin SMD plastic package.
- Trench MOSFET technology enabling very fast switching characteristics.
- Exposed drain pad designed for excellent thermal conduction.
Applications
- Charging switch for portable devices
- DC-to-DC converters
- Small brushless DC motor drive
- Power management in battery-driven portables
- Hard disc and computing power management
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for applications requiring low profile and high thermal efficiency in small form factors. The dual channel design allows for independent control or parallel operation within a single footprint. Ensure gate drive voltages remain within the specified limits to maintain optimal RDSon performance and switching speeds.
Part Context
This device belongs to Nexperia's portfolio of Trench MOSFETs, which utilize advanced silicon technology to reduce conduction losses while maintaining fast switching capabilities. The DFN2020-6 package is part of the HUSON family, offering improved thermal performance compared to traditional plastic packages of similar size.
Replacement Considerations
PMDPB30XNZ is a verified substitute with identical pinout and general specifications, though it may exhibit slightly different static characteristics such as RDSon thresholds.
FAQ
What is the maximum peak drain current?
The maximum peak drain current is 12 A under single pulse conditions with a duration of 10 µs or less at 25 °C.
How does the on-state resistance vary with temperature?
The drain-source on-state resistance increases with junction temperature; for example, it rises from a typical 32 mΩ at 25 °C to 55 mΩ at 150 °C under standard test conditions.
Is this product automotive qualified?
No, unless explicitly stated otherwise in the data sheet, this product is not suitable for automotive use and has not been qualified according to automotive testing standards.
