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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 3.6A 6HUSON
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3.6A (Ta), 9.3A (Tc)
- Rds On (Max) @ Id, Vgs：66mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：785pF @ 10V
- Power - Max：490mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：6-HUSON (2x2)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The PMDPB55XPAX is a dual P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It features a DFN2020-6 (SOT1118) leadless package measuring 2 x 2 x 0.65 mm with an exposed drain pad for thermal conduction. Key electrical parameters include a -20 V drain-source voltage, -3.6 A continuous drain current, and a typical on-state resistance of 50 mΩ at -4.5 V gate-source voltage. The device is AEC-Q101 qualified.
Feature Summary
- Low threshold voltage
- Very fast switching
- Trench MOSFET technology
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Exposed drain pad for excellent thermal conduction
- AEC-Q101 qualified
Applications
- DC to DC conversion
- High-speed line driver
- High-side load switch
- Switching circuits
Procurement Notes
Verify the exact ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the component meets specific automotive qualification requirements if intended for such environments. Cross-reference the marking code '8N' with the datasheet to validate authenticity upon receipt.
Selection Notes
Select this component for applications requiring compact dual P-channel switching solutions. The low on-state resistance and fast switching characteristics make it suitable for high-frequency power management. Ensure the PCB footprint matches the DFN2020-6 outline and utilizes the exposed drain pad for optimal thermal performance.
Part Context
This part belongs to Nexperia's portfolio of dual Trench MOSFETs designed for space-constrained designs. It integrates two independent P-channel transistors into a single ultra-thin leadless package. The technology focuses on minimizing footprint while maintaining robust thermal dissipation capabilities through the exposed pad design.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum drain-source voltage rating?
-20 V
What is the package type and dimensions?
DFN2020-6 (SOT1118), 2 x 2 x 0.65 mm
Is this component qualified for automotive use?
Yes, it is AEC-Q101 qualified.
