PMDPB56XNEAX

Overview

The PMDPB56XNEA is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It features a leadless DFN2020D-6 (SOT1118D) plastic package measuring 2 x 2 x 0.65 mm. The device supports a drain-source voltage of 30 V and a continuous drain current of 3.1 A per transistor at 25 °C. Static characteristics include a maximum on-state resistance of 72 mΩ at VGS = 4.5 V. The component is qualified to the AEC-Q101 standard for automotive applications.

Feature Summary

• Trench MOSFET technology enables low threshold voltage operation.
• Leadless medium power SMD plastic package with tin-plated side pads for optical solder inspection.
• Electrostatic discharge protection exceeding 2 kV HBM rating.
• Qualified to AEC-Q101 standards for high-performance automotive environments.

Applications

• LED driver
• Power management
• Low-side loadswitch
• Switching circuits

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging configuration, as suffixes may indicate variations in reel or cut tape specifications. Ensure the procurement channel sources directly from authorized distributors to guarantee authenticity and traceability. Confirm that the delivered components match the exact part number and marking codes specified in the product data sheet.

Selection Notes

Select this component for designs requiring compact dual N-channel switching solutions within space-constrained areas. The low threshold voltage facilitates efficient drive from low-voltage logic interfaces. Consider the thermal resistance values when designing heat dissipation strategies, particularly regarding junction-to-ambient and junction-to-solder point parameters under varying duty cycles.

Part Context

This device belongs to Nexperia's portfolio of small signal and logic MOSFETs designed for surface-mount applications. It utilizes advanced Trench technology to achieve low on-resistance within an ultra-thin, leadless package. The dual configuration allows for independent control of two channels within a minimal footprint, supporting modern electronic design density requirements.

Replacement Considerations

Consult official Nexperia cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout configurations, voltage ratings, and package dimensions to fit existing footprints without redesign.

FAQ

What is the maximum non-repetitive drain-source avalanche energy?

The maximum non-repetitive drain-source avalanche energy is 6.2 mJ when ID is 0.3 A and the initial junction temperature is 25 °C.

How does the gate-source threshold voltage vary with temperature?

The gate-source threshold voltage decreases as the junction temperature increases, ranging from a minimum of 0.75 V to a maximum of 1.25 V at 25 °C.

What are the internal capacitance values at VDS = 15 V?

At VDS = 15 V and f = 1 MHz, the input capacitance is typically 256 pF, output capacitance is 31 pF, and reverse transfer capacitance is 23 pF.