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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 3.6A 6HUSON
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3.6A
- Rds On (Max) @ Id, Vgs：67mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：804pF @ 10V
- Power - Max：515mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：6-HUSON (2x2)
- Grade：-
- Qualification：-
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Overview
The PMDPB58UPE,115 is a dual P-channel Trench MOSFET from Nexperia, housed in a leadless DFN2020-6 (SOT1118) package. It features a drain-source voltage of -20 V and a continuous drain current of -4.5 A per transistor. The typical on-state resistance is 58 mΩ at VGS = -4.5 V. Key dynamic parameters include a total gate charge of 9.5 nC and a turn-on delay time of 7 ns. The device operates within a junction temperature range of -55 °C to +150 °C and includes 2 kV HBM ESD protection.
Feature Summary
- Utilizes Trench MOSFET technology for low threshold voltage and very fast switching performance.
- Integrated 2 kV ElectroStatic Discharge (ESD) protection for enhanced robustness.
- Leadless ultra-thin plastic package design with an exposed drain pad for superior thermal conduction.
Applications
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
Procurement Notes
Verify the complete part number including the suffix
Selection Notes
Select this component for applications requiring compact dual P-channel switching with high thermal efficiency. Ensure the PCB footprint matches the DFN2020-6 outline and accounts for the exposed drain pad soldering requirements. Confirm that the -20 V rating and -4.5 A current capacity meet the specific circuit demands.
Part Context
This device belongs to Nexperia's portfolio of small-signal enhancement mode Field-Effect Transistors. It is designed as a medium power solution in a leadless SMD format, distinguishing it from standard single-channel MOSFETs by integrating two independent channels in one compact package for space-constrained designs.
Replacement Considerations
PMDPB55XPA is a confirmed substitute offering similar 20 V dual P-channel specifications in the same DFN2020-6 package.
FAQ
What is the maximum electrostatic discharge protection rating?
The device provides 2 kV ElectroStatic Discharge (ESD) protection when tested according to the Human Body Model (HBM).
How does the package design aid in thermal management?
The DFN2020-6 package features an exposed drain pad that facilitates excellent thermal conduction from the junction to the printed-circuit board.
What is the typical gate-source threshold voltage?
The typical gate-source threshold voltage is -0.7 V under standard test conditions.
