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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 3A 6HUSON
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3A
- Rds On (Max) @ Id, Vgs：79mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：600pF @ 10V
- Power - Max：515mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：6-HUSON (2x2)
- Grade：-
- Qualification：-
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Overview
The PMDPB70XPE,115 is a dual small-signal P-channel enhancement mode Field-Effect Transistor manufactured by Nexperia. It utilizes Trench MOSFET technology within a leadless DFN2020-6 (SOT1118) plastic package. Key electrical parameters include a drain-source voltage of 20 V and a continuous drain current of 4.2 A per transistor at 25 °C. The typical on-state resistance is 66 mΩ at -4.5 V gate-source voltage. The device offers 2 kV ESD protection and operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Dual configuration integrating two independent P-channel enhancement mode FETs in a single compact leadless package.
- Trench MOSFET technology enables very fast switching performance for efficient signal control.
- Integrated ElectroStatic Discharge protection rated at 2 kV HBM to safeguard against static damage.
Applications
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when a dual P-channel solution is required in a minimal footprint. The DFN2020-6 package provides thermal efficiency suitable for medium power applications. Ensure the design accommodates the 20 V breakdown limit and 4.2 A current rating under appropriate thermal conditions.
Part Context
This part belongs to Nexperia's portfolio of small-signal MOSFETs designed for general-purpose switching. It shares the DFN2020-6 form factor with other devices in the series but is distinct as a dual P-channel variant. The marking code for identification is 2B.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings before considering alternative manufacturers or different Nexperia models.
FAQ
What is the maximum electrostatic discharge protection level?
The device provides 2 kV ElectroStatic Discharge (ESD) protection according to the Human Body Model (HBM).
How many channels does this MOSFET contain?
The PMDPB70XPE contains two independent P-channel transistors integrated into a single package.
What is the operating junction temperature range?
The junction temperature range is specified from -55 °C to +150 °C.
