PMDPB85UPE,115

Overview

The PMDPB85UPE,115 is a dual P-channel enhancement mode Field-Effect Transistor manufactured by Nexperia. It utilizes Trench MOSFET technology within a leadless DFN2020-6 (SOT1118) plastic package. The device features a drain-source voltage of 20 V and a continuous drain current of 3.7 A per transistor at 25 °C. Static characteristics include a typical on-state resistance of 103 mΩ at VGS = -4.5 V. Dynamic performance includes a total gate charge of 8.1 nC. The component provides 2 kV ESD protection and operates with a junction temperature range from -55 °C to 150 °C.

Feature Summary

• Dual small-signal P-channel configuration in a single leadless package
• Trench MOSFET technology for low threshold voltage and fast switching
• Integrated 2 kV ElectroStatic Discharge (ESD) protection

Applications

• Relay driver
• High-speed line driver
• High-side load switch
• Switching circuits

Procurement Notes

Verify the complete part number including the suffix ',115' to ensure correct reel packaging specifications. Confirm RoHS compliance status through official Nexperia documentation prior to integration. Validate that the DFN2020-6 footprint matches your PCB design guidelines. Ensure thermal management strategies align with the specified junction-to-ambient resistance values for your operating environment.

Selection Notes

Select this component when a compact dual P-channel solution is required for high-side switching or relay driving applications. The DFN2020-6 package offers a small form factor suitable for space-constrained designs. Consider the 20 V rating and 3.7 A current capability against your specific load requirements. Verify compatibility with your logic levels given the low threshold voltage characteristics of the Trench technology.

Part Context

This device belongs to Nexperia's portfolio of small-signal power MOSFETs designed for general-purpose switching. It shares the SOT1118 package outline with other variants in the series but differs in channel type and internal structure. The dual configuration allows for complementary or independent control within a minimal footprint, distinguishing it from single-transistor alternatives in the same package family.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided datasheet. Engineers should consult Nexperia directly for qualified cross-reference recommendations or verify pin-compatible alternatives based on specific electrical parameter matching.

FAQ

What is the maximum electrostatic discharge protection rating?

The PMDPB85UPE provides 2 kV ElectroStatic Discharge (ESD) protection according to the Human Body Model (HBM).

How many transistors are contained within the package?

The device contains two independent P-channel enhancement mode transistors in a single dual configuration.

What is the recommended mounting pad size for optimal thermal performance?

For optimal thermal dissipation, a mounting pad for the drain of 6 cm² on an FR4 PCB is recommended.