PMDPB95XNE,115

Overview

The PMDPB95XNE is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a leadless DFN2020-6 (SOT1118) surface-mounted package measuring 2 x 2 x 0.6 mm with an exposed drain pad for thermal conduction. Key electrical parameters include a drain-source voltage of 30 V and a continuous drain current of 2.4 A at 25 °C. The typical on-state resistance is 95 mΩ at VGS = 4.5 V and ID = 2 A. The device supports junction temperatures from -55 °C to 150 °C and offers ESD protection up to 1.8 kV.

Feature Summary

• Trench MOSFET technology enables very fast switching speeds.
• Leadless medium power SMD plastic package provides excellent thermal conduction via an exposed drain pad.
• Integrated ESD protection rated up to 1.8 kV.

Applications

• Charging switch for portable devices
• DC-to-DC converters
• Small brushless DC motor drive
• Power management in battery-driven portables
• Hard disk and computing power management

Procurement Notes

Verify the manufacturer designation, as the product history indicates a transition from NXP Semiconductors to Nexperia B.V. Ensure the component matches the specific DFN2020-6 package outline and pin configuration defined in the official datasheet. Confirm that the sourcing channel provides authentic parts consistent with the original NXP specifications.

Selection Notes

Select this component for applications requiring low on-state resistance and high switching efficiency in compact designs. The dual configuration allows for independent control or parallel operation within a small footprint. Consider the thermal resistance characteristics when designing heat dissipation strategies for the exposed pad.

Part Context

This component belongs to the family of dual N-channel Trench MOSFETs designed for power management in portable electronics. It represents a shift towards leadless packages to improve thermal performance and reduce board space. The technology leverages trench structures to minimize resistance while maintaining robust switching capabilities.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

FAQ

What is the maximum electrostatic discharge rating for the PMDPB95XNE?

The device features ESD protection up to 1.8 kV, measured between all pins.

How does the package design aid in thermal management?

The DFN2020-6 package includes an exposed drain pad that facilitates excellent thermal conduction from the junction to the printed-circuit board.

What is the typical gate charge for this MOSFET?

The total gate charge is typically 1.65 nC, with a maximum of 2.5 nC under specified conditions.