PMDT290UNEYL

Overview

The PMDT290UNEYL is a dual N-channel enhancement mode Field-Effect Transistor manufactured by Nexperia USA Inc. It utilizes Trench MOSFET technology within an ultra-small SOT666 surface-mounted package. The device features two independent channels, each rated for a drain-source voltage of 20 V and a continuous drain current of 800 mA at 25 °C. Key electrical parameters include a maximum on-state resistance of 380 mΩ at VGS = 4.5 V and ID = 500 mA. Total power dissipation is limited to 500 mW per device at 25 °C ambient temperature.

Feature Summary

• Dual N-channel configuration utilizing Trench MOSFET technology for very fast switching performance.
• Integrated electrostatic discharge protection rated up to 2 kV via Human Body Model testing.
• Ultra-small and flat lead SOT666 plastic package designed for efficient surface-mount assembly.

Applications

• Relay driver circuits
• High-speed line drivers
• Low-side load switches
• General purpose switching circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Confirm that the component meets all required environmental standards and RoHS compliance levels before finalizing procurement orders. Ensure compatibility with existing supply chain requirements.

Selection Notes

Select this component when space-constrained designs require dual N-channel switching capabilities in a minimal footprint. The low on-state resistance supports efficient power handling for low-voltage applications. Verify that the gate drive voltage aligns with the specified threshold characteristics for optimal conduction performance.

Part Context

This part belongs to the PMDT290 series of dual N-channel MOSFETs from Nexperia. It is distinct from single-channel variants like the PMZ290UNE2YL and PNP counterparts such as the PMBT2907. The SOT666 package differentiates it from larger packages like SOT23 or SOT363 used in other series members.

Replacement Considerations

Direct substitutes include the PMDT290UNE without the YL suffix if packaging differences are acceptable. Other dual N-channel devices in the SOT666 package may serve as alternatives provided they meet the 20 V and 800 mA rating requirements.

FAQ

Is the PMDT290UNEYL automotive qualified?

No, the product data sheet explicitly states that this specific product has been changed to non-automotive qualification and is not suitable for automotive use.

What is the pin configuration for the SOT666 package?

Pin 1 is Source 1, Pin 2 is Gate 1, Pin 3 is Drain 2, Pin 4 is Source 2, Pin 5 is Gate 2, and Pin 6 is Drain 1.

What is the maximum peak drain current allowed?

The maximum peak drain current is 3.2 A under single pulse conditions with a duration of 10 µs or less at 25 °C ambient temperature.