PMDXB600UNELZ

Overview

The PMDXB600UNEL is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a leadless ultra-small DFN1010B-6 (SOT1216) package measuring 1.1 x 1.0 x 0.37 mm with an exposed drain pad for thermal conduction. The device supports a drain-source voltage of 20 V and a continuous drain current of 600 mA at 25 °C. Key electrical parameters include a typical drain-source on-state resistance of 470 mΩ, total gate charge of 0.4 nC, input capacitance of 21.3 pF, and reverse transfer capacitance of 4.2 pF.

Feature Summary

• Low leakage current characteristics
• Leadless ultra-small and ultra-thin SMD plastic package
• Exposed drain pad for excellent thermal conduction
• ElectroStatic Discharge protection exceeding 1 kV HBM

Applications

• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm the exact reel or cut tape configuration intended for procurement. Confirm that the component meets RoHS compliance requirements as specified in the product data sheet before finalizing supply chain agreements.

Selection Notes

Select this component for applications requiring low-profile surface-mount solutions with efficient heat dissipation via the exposed drain pad. Ensure the design accommodates the 20 V drain-source voltage limit and utilizes the 470 mΩ on-state resistance for optimal power efficiency in low-current switching environments.

Part Context

This part belongs to Nexperia's portfolio of small-signal MOSFETs designed for portable and consumer electronics. The DFN1010B-6 package provides a compact footprint suitable for space-constrained printed circuit boards while maintaining robust thermal performance through direct copper connection.

Replacement Considerations

PMDXB600UNEZ