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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.6A 6DFN
- Series：TrenchFET®
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：600mA
- Rds On (Max) @ Id, Vgs：620mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：21.3pF @ 10V
- Power - Max：265mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-XFDFN Exposed Pad
- Supplier Device Package：DFN1010B-6
- Grade：-
- Qualification：-
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Overview
The PMDXB600UNE is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a leadless ultra-small DFN1010B-6 (SOT1216) package measuring 1.1 x 1.0 x 0.37 mm with an exposed drain pad for thermal conduction. Key electrical parameters include a drain-source voltage of 20 V, gate-source voltage of ±8 V, and continuous drain current of 600 mA at 25 °C. The typical drain-source on-state resistance is 470 mΩ at VGS = 4.5 V. The device offers ESD protection exceeding 1 kV HBM.
Feature Summary
- Trench MOSFET technology for enhanced performance
- Leadless ultra-small and ultra-thin SMD plastic package
- Exposed drain pad for excellent thermal conduction
- ElectroStatic Discharge protection greater than 1 kV HBM
Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
Procurement Notes
Verify the specific ordering code against the manufacturer's official documentation to ensure correct package variant and marking code alignment. Confirm that the application environment remains within the specified junction temperature and power dissipation limits defined in the datasheet. Ensure PCB footprint matches the DFN1010B-6 standard to maintain thermal and electrical integrity during assembly.
Selection Notes
Select this component when space-constrained designs require dual N-channel switching capabilities in a minimal footprint. The low on-state resistance and high breakdown voltage make it suitable for low-voltage logic interfacing. Consider the thermal resistance characteristics if operating near maximum ambient temperatures or requiring efficient heat dissipation through the exposed pad.
Part Context
This device belongs to Nexperia's portfolio of small-signal MOSFETs designed for portable and compact electronics. The DFN1010B-6 package represents a trend toward miniaturization while maintaining adequate thermal handling through direct board contact. It serves as a discrete solution for replacing single-channel configurations in dual-switch applications.
Replacement Considerations
Consult official Nexperia cross-reference lists for verified substitutes. Ensure any replacement maintains the same pinout configuration and package dimensions to avoid PCB redesign.
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum gate-source voltage is rated at -8 V to +8 V.
How does the package design aid thermal management?
The DFN1010B-6 package features an exposed drain pad that provides excellent thermal conduction directly to the printed-circuit board.
Is this device suitable for automotive applications?
No, unless explicitly stated otherwise in the data sheet, this product is not automotive qualified and should not be used in automotive equipment.
