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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 1.2A 6TSSOP
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.2A
- Rds On (Max) @ Id, Vgs：145mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：83pF @ 10V
- Power - Max：390mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：6-TSSOP
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Overview
The PMGD130UN is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology in a SOT363 (TSSOP6) surface-mounted package. It features a drain-source voltage of 20 V and a continuous drain current of 1.3 A at 25 °C. The device exhibits a low on-state resistance of 145 mΩ maximum at VGS = 4.5 V. Operating temperatures range from -55 °C to 150 °C junction temperature, with total power dissipation rated at 390 mW.
Feature Summary
- Dual N-channel configuration within a compact SMD plastic package
- Low threshold voltage for efficient switching applications
- Very fast switching performance enabled by Trench MOSFET technology
Applications
- Relay driver circuits
- High-speed line drivers
- Low-side load switches
- General switching circuits
Procurement Notes
Verify the manufacturer designation carefully, as the original NXP Standard Product business transitioned to Nexperia in February 2017. Confirm that the component datasheet references align with the current corporate entity. Ensure the ordering suffix matches the required packaging specifications for your assembly process.
Selection Notes
Select this component for designs requiring a dual N-channel MOSFET in a minimal footprint. Evaluate thermal constraints against the specified power dissipation limits. Verify gate drive voltages meet the requirements for optimal RDSon performance. Consider the package dimensions during PCB layout planning.
Part Context
This device belongs to the PMGD series of dual N-channel Trench MOSFETs manufactured by Nexperia. It is designed for surface-mount applications where space efficiency and switching speed are critical. The SOT363 package provides a compact solution for integrating two independent channels into a single component.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on package type or general electrical ratings without verifying specific parameter alignment.
