PMGD175XNEX

Overview

The PMGD175XNEX is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology in a SOT363 (TSSOP6) package. It features a drain-source voltage of 30 V and a continuous drain current of 0.95 A at 25 °C. The device exhibits a maximum on-state resistance of 252 mΩ at VGS = 4.5 V and ID = 0.9 A. Key dynamic parameters include a total gate charge of 1.65 nC max, input capacitance of 81 pF max, turn-on delay of 7 ns typ, and fall time of 6 ns typ. Operating junction temperature ranges from -55 °C to 150 °C.

Feature Summary

• Low threshold voltage for efficient logic-level drive
• Very fast switching characteristics enabled by Trench MOSFET technology
• ElectroStatic Discharge protection exceeding 2 kV HBM

Applications

• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and tape/reel specifications. Ensure the component version matches the required product data sheet revision. Confirm that the intended application environment falls within the specified thermal and electrical limiting values defined in the datasheet.

Selection Notes

Select this component for designs requiring compact dual N-channel switching in a small surface-mount footprint. The low on-state resistance and fast switching speeds make it suitable for high-frequency applications. Verify that the gate drive voltage meets the requirements for optimal RDSon performance and that the thermal management strategy supports the specified power dissipation limits.

Part Context

This part belongs to Nexperia's portfolio of dual N-channel Trench MOSFETs designed for space-constrained applications. The SOT363 package provides a small footprint while maintaining adequate thermal performance for portable and industrial electronics. The technology integrates ESD protection and low threshold voltage characteristics typical of modern trench-based MOSFETs.

Replacement Considerations

Direct substitutes must match the 30 V rating, dual N-channel configuration, and SOT363 package. Verify pinout compatibility and ensure equivalent or superior electrical parameters for RDSon, VGS(th), and switching times. Check for automotive qualification if the original design requires AEC-Q101 compliance.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage is ±12 V.

Does this device support automotive applications?

No, unless explicitly stated otherwise in the specific product documentation, this product is not qualified for automotive use according to AEC standards.

What is the peak drain current capability?

The peak drain current is 4 A for single pulses with a duration of 10 µs or less at 25 °C ambient temperature.