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The PMGD280UN,115 is a dual N-channel enhancement mode field-effect transistor utilizing TrenchMOS technology. It features a maximum drain-source voltage of 20 V and a continuous drain current of 0.87 A at 25 °C. The device offers a typical on-state resistance of 340 mΩ at VGS = 4.5 V and a total gate charge of 0.89 nC. Encased in an SC-88 (SOT363) surface-mount package with six leads, it supports junction temperatures from -55 °C to +150 °C.
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component status remains active or acceptable for new designs, as older datasheets may not reflect current production lifecycle updates. Cross-reference the pinout diagram with your PCB footprint design to ensure alignment with the SOT363 standard.
Select this component when space constraints require a dual N-channel MOSFET in a small outline package. It is appropriate for applications requiring fast switching speeds and low on-resistance at low gate drive voltages. Ensure the thermal management strategy accounts for the total power dissipation limits defined in the absolute maximum ratings under expected operating conditions.
This device belongs to the μTrenchMOS family of ultra-low level FETs designed by Nexperia. It replaces earlier discrete solutions by integrating two channels into a single footprint, reducing board area requirements. The SC-88 package provides a footprint significantly smaller than traditional SOT23 packages while maintaining robust electrical performance for portable electronics.
Consult official Nexperia substitution guides for verified alternatives. Generic cross-references may differ in pinout or electrical characteristics.