PMGD280UN,115

PMGD280UN,115

$0.27
  • Description:MOSFET 2N-CH 20V 0.87A 6TSSOP
  • Series:TrenchMOS™

SKU:401d2ac2902a Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 0.87A 6TSSOP
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:870mA
  • Rds On (Max) @ Id, Vgs:340mOhm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.89nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:45pF @ 20V
  • Power - Max:400mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP
  • Grade:-
  • Qualification:-

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PMGD280UN,115

Overview

The PMGD280UN,115 is a dual N-channel enhancement mode field-effect transistor utilizing TrenchMOS technology. It features a maximum drain-source voltage of 20 V and a continuous drain current of 0.87 A at 25 °C. The device offers a typical on-state resistance of 340 mΩ at VGS = 4.5 V and a total gate charge of 0.89 nC. Encased in an SC-88 (SOT363) surface-mount package with six leads, it supports junction temperatures from -55 °C to +150 °C.

Feature Summary

  • Dual N-channel configuration in a compact SMD plastic package
  • Fast switching capability via TrenchMOS technology
  • Low on-state resistance for efficient power handling
  • Low threshold voltage suitable for low-level drive applications

Applications

  • Driver circuits
  • Switching in portable appliances

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component status remains active or acceptable for new designs, as older datasheets may not reflect current production lifecycle updates. Cross-reference the pinout diagram with your PCB footprint design to ensure alignment with the SOT363 standard.

Selection Notes

Select this component when space constraints require a dual N-channel MOSFET in a small outline package. It is appropriate for applications requiring fast switching speeds and low on-resistance at low gate drive voltages. Ensure the thermal management strategy accounts for the total power dissipation limits defined in the absolute maximum ratings under expected operating conditions.

Part Context

This device belongs to the μTrenchMOS family of ultra-low level FETs designed by Nexperia. It replaces earlier discrete solutions by integrating two channels into a single footprint, reducing board area requirements. The SC-88 package provides a footprint significantly smaller than traditional SOT23 packages while maintaining robust electrical performance for portable electronics.

Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives. Generic cross-references may differ in pinout or electrical characteristics.

PMGD280UN,115PMGD280UN,115
$0.27
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