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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.74A 6TSSOP
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：740mA
- Rds On (Max) @ Id, Vgs：440mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.65nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：37pF @ 25V
- Power - Max：410mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：6-TSSOP
- Grade：-
- Qualification：-
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Overview
The PMGD370XN is a dual N-channel enhancement mode field-effect transistor utilizing μTrenchMOS technology in an SC-88 (SOT363) plastic package. It features a drain-source voltage of 30 V and a continuous drain current of 0.74 A at 25 °C. The device exhibits a maximum on-state resistance of 440 mΩ at VGS = 4.5 V and 25 °C, with a total power dissipation of 0.41 W. Gate threshold voltage ranges from 0.5 V to 1.5 V.
Feature Summary
- Dual device configuration within a compact footprint that is 40% smaller than SOT23
- Low on-state resistance for reduced conduction losses
- Fast switching characteristics suitable for high-frequency applications
- Low threshold voltage compatible with low gate drive sources
Applications
- Driver circuits
- Switching in portable appliances
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and availability status. Ensure the component matches the required pinout and thermal specifications for the intended PCB layout. Cross-reference the datasheet revision date to confirm the validity of electrical parameters before finalizing design integration.
Selection Notes
Select this component for designs requiring a dual N-channel MOSFET in a minimal surface-mount footprint. The extremely low level gate threshold makes it appropriate for logic-level driving or battery-powered systems where low gate drive voltages are available. Evaluate the thermal resistance and power dissipation limits relative to the expected operating temperature range.
Part Context
This component belongs to Nexperia's portfolio of dual N-channel TrenchMOS transistors. It is designed for computing, communications, consumer, and industrial applications. The device integrates two independent channels in a single six-lead plastic package to save board space compared to discrete single-channel alternatives.
Replacement Considerations
Consult official substitution lists for verified equivalents. Generic replacements must match the SC-88 package, 30 V rating, and dual channel configuration.
