PMGD780SN,115

Overview

The PMGD780SN,115 is a dual N-channel enhancement mode field-effect transistor utilizing μTrenchMOS technology in an SOT363 (SC-88) surface-mounted package. It features a drain-source voltage of 60 V and a continuous drain current of 0.49 A at 25 °C. The device exhibits a maximum on-state resistance of 920 mΩ at VGS = 10 V and 1400 mΩ at VGS = 4.5 V. Total gate charge is typically 1.05 nC. Operating junction temperature ranges from -55 °C to +150 °C with total power dissipation limited to 0.41 W.

Feature Summary

• Dual configuration within a compact footprint 40% smaller than SOT23
• Low conduction losses due to standard level on-state resistance
• Fast switching characteristics suitable for high frequency applications
• Standard level threshold voltage compatible with common logic levels

Applications

• Driver circuits
• Switching in portable appliances

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when space-constrained designs require dual N-channel MOSFETs in a minimal footprint. Ensure the application operates within the 60 V drain-source limit and accounts for thermal derating above 25 °C solder point temperature. Verify that the required gate drive voltage aligns with the specified RDSon performance curves for optimal efficiency.

Part Context

This device belongs to Nexperia's μTrenchMOS standard level FET family, designed for computing, communications, consumer, and industrial markets. It replaces legacy NXP Semiconductors products following the corporate restructuring in 2017. The SOT363 package facilitates automated surface-mount assembly while maintaining electrical performance comparable to larger packages.

Replacement Considerations

Check for direct pin-compatible alternatives within the same series or verify if upgraded variants with lower RDSon are available. Confirm that any substitute maintains the SOT363 outline dimensions and thermal characteristics to ensure board compatibility without redesign.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDS) is rated at 60 V.

How does junction temperature affect on-state resistance?

RDSon increases significantly with temperature; it rises from a typical 780 mΩ at 25 °C to approximately 1445 mΩ at 150 °C under identical bias conditions.

Is this component automotive qualified?

No, unless explicitly stated otherwise in specific documentation, this product is not qualified for automotive use according to AEC-Q101 standards.