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Product Detailed Parameters
- Description：PMPB27EP/SOT1220/SOT1220
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The Nexperia PMPB27EP is a single P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a leadless DFN2020MD-6 (SOT1220) plastic package measuring 2 x 2 x 0.65 mm. The device features an exposed drain pad for thermal management and tin-plated side pads for optical inspection. Key electrical parameters include a drain-source voltage of -30 V, a continuous drain current of -6.1 A at 25 °C, and a maximum on-state resistance of 29 mΩ at VGS = -10 V.
Feature Summary
- Trench MOSFET technology for enhanced performance
- Leadless ultra-thin SMD plastic package with exposed drain pad
- Tin-plated side pads enabling optical solder inspection
Applications
- Charging switch for portable devices
- DC-to-DC converters
- Power management in battery-driven portable devices
- Hard disk and computing power management
Procurement Notes
Verify the exact ordering suffix against the manufacturer's official documentation to ensure correct packaging and reel specifications. Confirm that the component status remains active for production use. Cross-reference the datasheet revision history to ensure the latest product specifications are being utilized for design integration.
Selection Notes
Select this component for applications requiring a compact P-channel MOSFET with low on-state resistance. Ensure the gate drive voltage meets the -4.5 V or -10 V requirements for optimal RDSon performance. Verify thermal constraints align with the specified junction-to-ambient resistance values for the intended PCB footprint.
Part Context
This part belongs to the Nexperia PMPB series of single P-channel Trench MOSFETs. It is designed as a medium-power solution in a small outline package. The device is suitable for general-purpose switching applications where space constraints and thermal efficiency are critical design factors.
Replacement Considerations
Consult the manufacturer's official cross-reference data for verified substitute part numbers. Ensure any replacement maintains compatibility with the DFN2020MD-6 package and meets the required -30 V and -6.1 A specifications.
