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PMPB40ENAX is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is PMPB40ENA - 60 V, N-CHANNEL TREN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for PMPB40ENAX
- Description：PMPB40ENA - 60 V, N-CHANNEL TREN
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：43mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：590 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.27W (Ta), 15W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DFN2020MD-6
- Package / Case：6-UDFN Exposed Pad
Single FETs, MOSFETs datasheet and documents for PMPB40ENAX
Single FETs, MOSFETs Overview
The Nexperia PMPB40ENAX is a 60 V N-channel Trench MOSFET in a DFN2020MD-6 package. It features a drain-source voltage of 60 V and a continuous drain current of 12.9 A at 25 °C. The on-state resistance is typically 34 mΩ at VGS = 10 V. Gate-source voltage limits are ±20 V. Total gate charge is typically 12.1 nC. Operating junction temperature ranges from -55 °C to 150 °C.
Single FETs, MOSFETs Feature Summary
- Utilizes Trench MOSFET technology for enhanced performance.
- Features an exposed drain pad for superior thermal conduction.
- Includes tin-plated side pads for optical solder inspection.
Single FETs, MOSFETs Applications
- Relay driver
- High-speed line driver
- Low-side load switch
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation, as suffixes determine packaging and reel specifications. Confirm that the component meets the required automotive qualification standards if intended for such environments. Ensure the requested part number matches the exact electrical characteristics defined in the datasheet before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a compact, leadless surface-mount solution with high thermal efficiency. The low on-state resistance supports efficient power switching. Verify that the 60 V rating and 12.9 A current capacity align with the circuit requirements. Consider the small footprint when designing PCB layouts for space-constrained systems.
Single FETs, MOSFETs Part Context
This device belongs to the PMPB series of N-channel enhancement mode Field-Effect Transistors manufactured by Nexperia. It is designed using Trench MOSFET technology within a plastic thermal-enhanced ultra-thin small outline package. The product is qualified according to AEC-Q101 standards for automotive applications.
Single FETs, MOSFETs Replacement Considerations
PMPB40SNA
Single FETs, MOSFETs FAQ
What is the maximum drain-source voltage rating?
The maximum drain-source voltage (VDS) is rated at 60 V.
Is this component suitable for automotive applications?
Yes, the product has been qualified in accordance with the AEC-Q101 standard for discrete semiconductors.
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