PMV48XP/MIR

Single FETs, MOSFETs Overview

The PMV48XP/MIR is a P-channel enhancement mode Field-Effect Transistor manufactured by Nexperia. It utilizes Trench MOSFET technology to achieve low on-resistance and fast switching speeds. The device is housed in an SOT-23 (TO-236AB) surface-mount plastic package. Key electrical specifications include a drain-source breakdown voltage of 20 V, a continuous drain current of 3.5 A, and a maximum gate-source voltage of ±12 V. The component operates within a temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Utilizes Trench MOSFET technology for enhanced performance
• Features logic-level compatibility for direct interface with standard logic circuits
• Provides very fast switching characteristics suitable for high-speed applications

Single FETs, MOSFETs Applications

• Relay driver circuits
• High-speed line drivers
• High-side load switches
• General-purpose switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'MIR' against official Nexperia documentation to confirm tape-and-reel packaging details and marking codes. Ensure the selected variant matches the required operating temperature range and ESD protection levels specified in the datasheet. Cross-reference the ordering code with authorized distributors to confirm availability and authenticity before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a compact P-channel switch with low conduction losses. The SOT-23 package is ideal for space-constrained designs. Consider the 20 V rating and 3.5 A current capacity when designing power stages. Verify that the logic-level gate drive requirements align with the system's control voltage levels to ensure reliable turn-on and turn-off operation.

Single FETs, MOSFETs Part Context

This part belongs to Nexperia's portfolio of small-signal MOSFETs designed for general-purpose switching. The PMV series typically offers optimized trade-offs between on-resistance and gate charge. These devices are commonly used in portable electronics, computing peripherals, and industrial control systems where efficient power management and small form factors are critical design constraints.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the P-channel polarity, 20 V minimum voltage rating, and SOT-23 package. Verify that substitute components offer comparable Rds(on) and switching times. Check for equivalent thermal resistance and ESD protection ratings to ensure circuit reliability is maintained during substitution.