PMWD19UN,518

Overview

The PMWD19UN is a dual N-channel enhancement mode field-effect transistor utilizing μTrenchMOS technology. It features a low profile plastic SOT530-1 (TSSOP8) package. The device supports a drain-source voltage of 30 V and a continuous drain current of 5.6 A at 25 °C. Total power dissipation reaches 2.3 W, with an on-state resistance of 23 mΩ maximum at VGS = 4.5 V. Gate threshold voltage ranges from 0.45 V to 0.7 V. Thermal resistance from junction to solder point is typically 55 K/W.

Feature Summary

• Dual configuration in a single surface-mount package
• Ultra-low gate threshold voltage for efficient switching
• Fast switching characteristics enabled by TrenchMOS technology

Applications

• Portable appliances
• PCMCIA cards
• Battery management systems
• Load switching circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm package type and tape-and-reel specifications. Confirm that the component status remains active or qualified for production before initiating design-in processes. Ensure compliance with absolute maximum ratings during operation.

Selection Notes

Select this component for applications requiring compact dual FET solutions with low drive requirements. Evaluate thermal performance based on the specified junction-to-solder point resistance. Consider the peak drain current capabilities when designing for pulsed load conditions within the safe operating area limits.

Part Context

This component belongs to the μTrenchMOS family of power transistors designed for high efficiency and low conduction losses. It serves as a discrete solution for managing multiple channels in space-constrained environments where standard MOSFET footprints are prohibitive.

Replacement Considerations

Consult official replacement lists for direct equivalents. Verify pinout compatibility and electrical parameters such as RDSon and VGS(th) before substituting.