PMZB370UNE,315

$0.32

Description：MOSFET N-CH 30V 900MA DFN1006B-3
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:84311e0e3afa Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

PMZB370UNE,315 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 30V 900MA DFN1006B-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PMZB370UNE,315

Description：MOSFET N-CH 30V 900MA DFN1006B-3
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：490mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id：1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.16 nC @ 15 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：78 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：360mW (Ta), 2.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DFN1006B-3
Package / Case：3-XFDFN

Single FETs, MOSFETs datasheet and documents for PMZB370UNE,315

PMZB370UNE,315

Single FETs, MOSFETs Overview

The PMZB370UNE is a single N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a leadless ultra-small DFN1006B-3 (SOT883B) plastic package with a body size of 1.0 x 0.6 mm and a height of 0.37 mm. The device supports a drain-source voltage of 30 V and a continuous drain current of 900 mA at 25 °C. Key electrical characteristics include a maximum on-state resistance of 490 mΩ at VGS = 4.5 V and ID = 500 mA, and a total gate charge of 1.16 nC max at VGS = 4.5 V. It features ESD protection up to 2 kV HBM and operates within a junction temperature range of -55 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

Very fast switching performance enabled by Trench MOSFET technology
Ultra-thin package profile with a height of 0.37 mm for space-constrained designs
Low threshold voltage suitable for low-power logic interfaces
Integrated electrostatic discharge protection rated up to 2 kV

Single FETs, MOSFETs Applications

Relay driver circuits
High-speed line drivers
Low-side load switches
General switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and marking codes. Confirm that the component status remains active for new designs, as product lifecycles may change. Cross-reference the pinout configuration with your PCB footprint design to prevent installation errors during assembly.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring minimal board space due to its compact DFN1006B-3 package. Ensure the gate drive voltage meets the requirements for optimal on-state resistance, particularly at lower voltages like 1.8 V or 2.5 V where resistance increases. Consider the thermal resistance values when designing heat dissipation strategies for high-duty cycle operations.

Single FETs, MOSFETs Part Context

This part belongs to Nexperia's portfolio of small-signal MOSFETs designed for portable and consumer electronics. The SOT883B package is standard for ultra-small surface-mount applications. It serves as a discrete solution for power management and signal switching tasks where size and switching speed are critical constraints.