Single Bipolar Transistors PN2907BU product image

PN2907BU

$0.27
  • Description:TRANS PNP 40V 0.8A TO-92-3
  • Series:-

SKU:93258c85d5ef Category: Brand:

  
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PN2907BU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 40V 0.8A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for PN2907BU

  • Description:TRANS PNP 40V 0.8A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk,Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
  • Power - Max:625 mW
  • Frequency - Transition:-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for PN2907BU

PN2907BU

Single Bipolar Transistors Overview

The PN2907BU is a PNP silicon epitaxial planar transistor manufactured by onsemi, belonging to the KSP2907A and PN2907A series. It is designed for general-purpose switching and amplification applications in through-hole circuits. The device features a TO-92-3 package configuration with single transistor topology. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 60 V and a collector-base voltage (VCBO) of 60 V. The emitter-base voltage (VEBO) is rated at 5 V. The component supports a maximum DC collector current of 600 mA and a power dissipation (Pd) of 625 mW. It exhibits a gain-bandwidth product (fT) of 200 MHz and a maximum DC current gain (hFE) of 300. The collector-emitter saturation voltage is 1.6 V. The operational temperature range extends up to +150°C.

Single Bipolar Transistors Feature Summary

  • PNP polarity silicon epitaxial planar construction
  • General-purpose switching and amplification capability
  • Through-hole mounting compatibility

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Amplifier stages
  • Driver circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'BU' against the official onsemi datasheet to confirm package lead form and tape/reel or bulk packaging details. Ensure the ordering part number matches the required voltage and current ratings for the target application. Confirm RoHS compliance status as indicated in the manufacturer's documentation prior to procurement.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 60 V breakdown and 600 mA continuous current capacity is required in a TO-92 package. Compare hFE ranges and saturation voltages against circuit requirements. Consider thermal management for power dissipation limits near 625 mW. Verify pinout compatibility if replacing existing designs.

Single Bipolar Transistors Part Context

The PN2907BU is part of the broader PN2907/KSP2907 family of PNP transistors from onsemi. These devices are widely used in consumer electronics and industrial control systems. The BU suffix typically denotes specific packaging or testing criteria within the manufacturer's lineup, distinguishing it from other variants like the ATA or standard bulk packages.

Single Bipolar Transistors Replacement Considerations

Direct substitutes may include the PN2907ATA or KSP2907ABU from onsemi, provided package and electrical parameters align. Cross-manufacturer equivalents such as the MPS2907ARL1 or generic 2N3906 types may be considered if voltage and current ratings are sufficient, though exact parameter matching is recommended.

PN2907BUPN2907BU
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