PN3563

Overview

The PN3563 is an NPN silicon RF small-signal bipolar transistor manufactured by Fairchild Semiconductor, now part of onsemi. Designed for very high frequency applications, it operates up to 1.5 GHz with a maximum collector-emitter voltage (VCEO) of 15 V and an emitter-base voltage (VEBO) of 2 V. The device supports a continuous collector current of 50 mA and features a minimum DC current gain (hFE) of 20. It is housed in a TO-92-3 kinked lead through-hole package with a power dissipation rating of 350 mW. The component functions as a single-element transistor suitable for RF circuits within an operating temperature range of -55°C to +150°C.

Feature Summary

• Optimized for very high frequency band operations up to 1.5 GHz
• Utilizes silicon technology for robust RF signal processing
• Provides reliable performance in single-element configurations

Applications

• RF amplifier stages in communication equipment
• High-frequency oscillator circuits
• Signal processing in radio frequency systems

Procurement Notes

Verify the specific manufacturer designation, as production has transitioned from Fairchild Semiconductor to onsemi. Confirm the exact suffix variant, such as D74Z or J18Z, to ensure compatibility with required packaging formats like Ammo Pack or tube. Check current lifecycle status, as some variants may be discontinued or subject to supply constraints. Validate RoHS compliance requirements against the specific ordering code before procurement.

Selection Notes

Select this component when designing circuits requiring NPN bipolar transistors for frequencies up to 1.5 GHz. Ensure the design accommodates the 15 V collector-emitter voltage limit and 50 mA current capacity. Consider the TO-92 through-hole package for prototyping or applications where surface mount options are unsuitable. Verify thermal management capabilities given the 350 mW power dissipation rating in the chosen enclosure.

Part Context

The PN3563 belongs to the broader family of RF bipolar transistors produced by Fairchild Semiconductor and its successor, onsemi. This series includes various NPN silicon devices tailored for high-frequency amplification and switching. The PN3563 specifically addresses needs for low-power RF applications, distinguishing itself through its specific voltage and frequency ratings within the company's discrete semiconductor portfolio.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate equivalent NPN RF transistors with similar VCEO, frequency, and package specifications if direct replacement is necessary.