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Product Detailed Parameters
- Description：RF TRANS NPN 15V 1.5GHZ TO-92-3
- Series：-
- Mfr：onsemi
- Package：Tape & Box (TB)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：1.5GHz
- Noise Figure (dB Typ @ f)：-
- Gain：14dB ~ 26dB
- Power - Max：350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 8mA, 10V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The PN3563 is an NPN silicon RF amplifier transistor housed in a TO-92 plastic package. It operates with a collector-emitter voltage of 15 V and a continuous collector current of 50 mA. The device features a transition frequency ranging from 600 MHz to 1500 MHz at 8.0 mA and 10 V. DC current gain spans 20 to 200 under similar conditions. Total device dissipation is rated at 350 mW, derating by 2.8 mW/°C above 25°C. Junction temperature ranges from -55°C to +150°C.
Feature Summary
- Designed for RF amplification, oscillation, and frequency multiplication applications
- Optimized for collector currents between 1.0 mA and 30 mA
- High transition frequency suitable for UHF band operations
Applications
- RF Amplifiers
- Oscillators
- Frequency Multipliers
Procurement Notes
Verify the manufacturer origin as onsemi may have acquired Fairchild Semiconductor assets. Confirm the specific ordering suffix D75Z corresponds to the required Ammo Pack configuration if automated assembly is planned. Ensure the component meets RoHS compliance requirements for the intended market. Check for any lifecycle status changes regarding discontinuation or obsolescence before finalizing procurement plans.
Selection Notes
Select this component when high-frequency performance is required within a low-voltage environment. The TO-92 package limits power handling capabilities compared to surface-mount alternatives. Consider the thermal resistance characteristics for heat dissipation in enclosed designs. Verify that the operating current remains within the specified 1.0 mA to 30 mA range for optimal RF characteristics.
Part Context
This part belongs to the family of small-signal NPN transistors designed specifically for radio frequency applications. It utilizes Process 43 technology, sharing characteristics with related models like the PN918. The device serves as a discrete solution for signal processing in consumer electronics and communication equipment requiring compact packaging.
Replacement Considerations
Consult the official datasheet for direct substitutes. Equivalent parts must match the 15 V VCEO rating and TO-92 form factor. Verify transition frequency and current gain specifications align with circuit requirements before substitution.
FAQ
What is the maximum collector-base breakdown voltage?
The maximum collector-base breakdown voltage (V(BR)CBO) is 30 V.
How does the transition frequency vary with test conditions?
The transition frequency (fT) is specified between 600 MHz and 1500 MHz when tested at IC = 8.0 mA and VCE = 10 V.
What is the recommended operating junction temperature range?
The operating and storage junction temperature range is -55°C to +150°C.
