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PN3566 TRE TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 30V 600MA 625MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.
The PN3566 TRE TIN/LEAD is an NPN silicon small-signal bipolar junction transistor manufactured by Central Semiconductor. It features a collector-emitter voltage of 30V, a collector-base voltage of 40V, and an emitter-base voltage of 5V. The device supports a continuous collector current of 600mA with a power dissipation rating of 625mW. It operates within a temperature range of -65°C to +150°C and utilizes a TO-92-3 through-hole package.
Verify the specific suffix designation against official manufacturer documentation to confirm lead-free status and plating composition. Ensure the ordering code matches the required packaging format, as variations exist between tape-and-reel and other distribution methods. Confirm RoHS compliance details directly with the supplier prior to procurement.
Select this component for low-voltage, moderate-current applications requiring high gain. The TO-92-3 package suits through-hole designs. Verify that the 625mW power dissipation limit accommodates the circuit's thermal requirements. Ensure the 30V collector-emitter voltage exceeds the maximum operating voltage in the target application.
This part belongs to the PN3566 series of NPN transistors produced by Central Semiconductor Corp. The series is designed for general-purpose use in consumer and industrial electronics. The specific variant includes tin/lead plating options, distinguishing it from fully lead-free equivalents in terms of material composition while maintaining identical electrical characteristics.
Cross-reference with other NPN TO-92 transistors offering similar Vceo, Ic, and hFE specifications. Verify pinout compatibility and thermal resistance values before substituting.
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