Single Bipolar Transistors PN3566 TRE TIN/LEAD product image

PN3566 TRE TIN/LEAD

$0.28
  • Description:30V 600MA 625MW TH TRANSISTOR-SM
  • Series:-

SKU:4ba5f5202454 Category: Brand:

  
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PN3566 TRE TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 30V 600MA 625MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for PN3566 TRE TIN/LEAD

  • Description:30V 600MA 625MW TH TRANSISTOR-SM
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):600 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 10mA, 100mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 10mA, 10V
  • Power - Max:625 mW
  • Frequency - Transition:40MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for PN3566 TRE TIN/LEAD

PN3566 TRE TIN/LEAD

Single Bipolar Transistors Overview

The PN3566 TRE TIN/LEAD is an NPN silicon small-signal bipolar junction transistor manufactured by Central Semiconductor. It features a collector-emitter voltage of 30V, a collector-base voltage of 40V, and an emitter-base voltage of 5V. The device supports a continuous collector current of 600mA with a power dissipation rating of 625mW. It operates within a temperature range of -65°C to +150°C and utilizes a TO-92-3 through-hole package.

Single Bipolar Transistors Feature Summary

  • NPN silicon construction for general-purpose amplification and switching
  • High DC current gain ranging from 80 to 600 under specified test conditions
  • Robust thermal performance supporting operation up to 150°C

Single Bipolar Transistors Applications

  • General-purpose amplifier circuits
  • Electronic switching applications
  • Small-signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix designation against official manufacturer documentation to confirm lead-free status and plating composition. Ensure the ordering code matches the required packaging format, as variations exist between tape-and-reel and other distribution methods. Confirm RoHS compliance details directly with the supplier prior to procurement.

Single Bipolar Transistors Selection Notes

Select this component for low-voltage, moderate-current applications requiring high gain. The TO-92-3 package suits through-hole designs. Verify that the 625mW power dissipation limit accommodates the circuit's thermal requirements. Ensure the 30V collector-emitter voltage exceeds the maximum operating voltage in the target application.

Single Bipolar Transistors Part Context

This part belongs to the PN3566 series of NPN transistors produced by Central Semiconductor Corp. The series is designed for general-purpose use in consumer and industrial electronics. The specific variant includes tin/lead plating options, distinguishing it from fully lead-free equivalents in terms of material composition while maintaining identical electrical characteristics.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other NPN TO-92 transistors offering similar Vceo, Ic, and hFE specifications. Verify pinout compatibility and thermal resistance values before substituting.

PN3566 TRE TIN/LEADPN3566 TRE TIN/LEAD
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