PN3638A TRE TIN/LEAD

$0.32

Description：25V 800MA 625MW TH TRANSISTOR-SM
Series：-

SKU:a08785055309 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

PN3638A TRE TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 25V 800MA 625MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for PN3638A TRE TIN/LEAD

Description：25V 800MA 625MW TH TRANSISTOR-SM
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR)
Transistor Type：PNP
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：25 V
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：35nA
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 50mA, 1V
Power - Max：-
Frequency - Transition：150MHz
Operating Temperature：-
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for PN3638A TRE TIN/LEAD

PN3638A TRE TIN/LEAD

Single Bipolar Transistors Overview

The PN3638A is a PNP silicon transistor manufactured by Central Semiconductor Corp. It features a collector-emitter voltage of 30V and a continuous collector current of 600mA. The device has a maximum power dissipation of 625mW and operates within a temperature range of -65°C to +150°C. It is housed in a TO-92-3 through-hole package.

Single Bipolar Transistors Feature Summary

PNP polarity configuration for complementary circuit designs
Through-hole mounting capability via TO-92-3 package
Silicon construction for stable operation across wide temperatures

Single Bipolar Transistors Applications

General purpose amplifier circuits
Switching applications requiring moderate current handling
Complementary pairs with NPN transistors

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix TRE TIN/LEAD against manufacturer documentation to confirm lead-free status and tin-lead plating specifications. Ensure the component matches the required TO-92-3 form factor and electrical ratings for the target design before procurement.

Single Bipolar Transistors Selection Notes

Select this component when a PNP small-signal transistor with 600mA collector current and 30V breakdown voltage is required. Consider the TO-92-3 package for through-hole assembly needs. Verify thermal management requirements given the 625mW power dissipation limit in enclosed environments.

Single Bipolar Transistors Part Context

This part belongs to Central Semiconductor's discrete bipolar junction transistor lineup. It serves as a PNP counterpart to NPN devices like the MPSA18 or MPS6514, enabling push-pull or differential stage configurations in analog signal processing and power control systems.