PN4092 TIN/LEAD

$0.43

Description：2V 7V 10MA 625MW TH JFET N CHANN
Series：-

SKU:484fa63aff1e Category: JFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：2V 7V 10MA 625MW TH JFET N CHANN
Series：-
Mfr：Central Semiconductor Corp
Package：Box
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：40 V
Drain to Source Voltage (Vdss)：40 V
Current - Drain (Idss) @ Vds (Vgs=0)：-
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：-
Input Capacitance (Ciss) (Max) @ Vds：16pF @ 20V
Resistance - RDS(On)：50 Ohms
Power - Max：625 mW
Operating Temperature：-55°C ~ 150°C
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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PN4092 TIN/LEAD

Overview

The PN4092 TIN/LEAD is an N-channel Junction Field-Effect Transistor (JFET) manufactured by Central Semiconductor Corp. It utilizes silicon technology and is housed in a TO-92-3 through-hole package. Key electrical ratings include a maximum drain-source voltage of 40 V, a gate-source breakdown voltage of 40 V, and a continuous drain current of 10 mA. The device dissipates up to 625 mW of power and operates within a temperature range of -65°C to +150°C.

Feature Summary

N-channel JFET configuration for signal amplification
High input impedance characteristics
Through-hole mounting capability

Applications

Low-noise preamplifier stages
Analog switching circuits
Voltage-controlled resistor applications

Procurement Notes

Verify the specific ordering suffix 'TIN/LEAD' to confirm leaded terminal availability, as this differs from Pb-free variants. Confirm RoHS compliance status with the manufacturer prior to procurement. Ensure the TO-92-3 package dimensions match the target PCB footprint requirements for proper assembly.

Selection Notes

Select this component when an N-channel JFET with a 40V voltage rating and low gate leakage is required. Compare the 10mA drain current limit against circuit load demands. Verify that the TO-92-3 package suits the thermal management needs, given the 625mW power dissipation limit at elevated temperatures.

Part Context

This part belongs to the Central Semiconductor discrete transistor portfolio. It serves as a specialized analog switching and amplification element distinct from bipolar junction transistors. The TO-92-3 form factor allows for standard through-hole integration in compact electronic assemblies requiring high input impedance.