PN4303_D26Z

PN4303_D26Z

$0.05
  • Description:JFET N-CH 30V TO92-3
  • Series:-

SKU:1be6b0459fb6 Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET N-CH 30V TO92-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):30 V
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):4 mA @ 15 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:6 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Resistance - RDS(On):-
  • Power - Max:625 mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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PN4303_D26Z

Overview

The PN4303_D26Z is an N-channel general-purpose amplifier JFET in a TO-92 package. It features a drain-gate voltage of 30 V and a gate-source breakdown voltage of -30 V. The device operates within a junction temperature range of -55°C to 150°C. Key electrical characteristics include a zero-gate voltage drain current of 4.0 mA to 10 mA at -15V, and a gate reverse current of -1.0 nA at -10V. Total device dissipation is rated at 625 mW with a thermal resistance of 357 °C/W.

Feature Summary

  • Designed for low-level audio applications
  • Suitable for high impedance signal sources
  • General purpose amplification

Applications

  • Low level audio circuits
  • High impedance signal source interfaces
  • General purpose amplification

Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor or onsemi based on the specific ordering suffix. Confirm the package type matches the TO-92 specification. Ensure the component meets the required thermal and electrical ratings for the intended application environment. Check for any obsolescence status updates from the supplier.

Selection Notes

Select this component for applications requiring N-channel JFET amplification with high input impedance. Consider the -30 V gate-source breakdown voltage and 625 mW power dissipation limits. Evaluate the thermal resistance of 357 °C/W for heat management in the specific circuit layout.

Part Context

This part belongs to the family of N-channel JFETs designed for general-purpose amplification. It is commonly used in analog signal processing where high input impedance is critical. The TO-92 package provides a compact solution for through-hole mounting.

Replacement Considerations

  • PN4303

FAQ

What is the maximum gate-source breakdown voltage?

The maximum gate-source breakdown voltage is -30 V.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to 150°C.

What is the typical zero-gate voltage drain current?

The zero-gate voltage drain current ranges from 4.0 mA to 10 mA at VDS = -15V.

PN4303_D26ZPN4303_D26Z
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