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Product Detailed Parameters
- Description：4V 10V 50MA 625MW TH JFET N CHAN
- Series：PN4391
- Mfr：Central Semiconductor Corp
- Package：Box
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：50 mA @ 20 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：4 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：14pF @ 20V
- Resistance - RDS(On)：30 Ohms
- Power - Max：625 mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The PN4391 is an N-channel Junction Field-Effect Transistor (JFET) manufactured by Central Semiconductor Corp. Constructed using silicon technology, this component features a maximum drain-source voltage of 40V and a gate-source breakdown voltage of 40V. It supports a continuous drain current of 50mA with a power dissipation rating of 625mW. The device exhibits a typical on-resistance of 30 Ohms at zero gate-source voltage. Designed for through-hole mounting in TO-92-3 packages, it operates within a temperature range of -65°C to +150°C.
Feature Summary
- N-channel JFET configuration utilizing silicon semiconductor technology
- Capable of handling up to 40V drain-source and gate-source voltages
- Supports continuous drain currents up to 50mA with 625mW power dissipation
- Low on-resistance characteristic suitable for signal switching applications
Applications
- Analog signal switching circuits
- Voltage-controlled resistor implementations
- High-impedance input buffer stages
- Audio pre-amplifier front ends
Procurement Notes
Verify the specific ordering suffix when purchasing. The TIN/LEAD designation indicates lead finish composition, which may differ from Pb-free variants. Confirm package type and thermal specifications against design requirements. Ensure compatibility with existing assembly processes regarding material composition. Cross-reference datasheet electrical limits with circuit operating conditions to prevent overstress.
Selection Notes
Select this component for applications requiring low noise and high input impedance. Compare on-resistance values against alternative JFETs for precise control needs. Evaluate thermal management capabilities given the 625mW dissipation limit. Consider package constraints for PCB layout. Verify voltage ratings exceed peak circuit transients to ensure reliability under varying load conditions.
Part Context
This part belongs to Central Semiconductor's discrete transistor lineup, specifically within the JFET category. It serves as a fundamental active component for analog electronics. The manufacturer provides technical documentation detailing absolute maximum ratings and electrical characteristics. This series supports various through-hole packaging options for different volume and handling requirements.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source data. Consult official manufacturer cross-reference guides or equivalent JFET specifications for potential alternatives.
