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Product Detailed Parameters
- Description：4V 10V 50MA 625MW TH JFET N CHAN
- Series：PN4391
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：50 mA @ 20 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：4 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：14pF @ 20V
- Resistance - RDS(On)：30 Ohms
- Power - Max：625 mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The PN4391 is an N-channel silicon Junction Field-Effect Transistor (JFET) manufactured by Central Semiconductor. It is housed in a TO-92-3 through-hole package and operates as a single-element device. Key electrical specifications include a gate-source breakdown voltage of 40 V, a gate-source cutoff voltage of 10 V, and a drain-source current of 150 mA at zero gate-source voltage. The component exhibits a drain-source on-resistance of 30 Ohms and a power dissipation rating of 625 mW. It supports an operating temperature range from -65°C to +150°C.
Feature Summary
- Utilizes silicon junction technology for small-signal amplification applications.
- Features a robust thermal profile with a maximum junction temperature capability up to 150°C.
- Designed for through-hole mounting in standard TO-92-3 configurations.
Applications
- Low-noise preamplifier stages
- High-impedance input buffers
- Constant current source circuits
Procurement Notes
Verify the specific suffix TRE TIN/LEAD against the manufacturer's current datasheet to confirm lead composition and RoHS status, as tin/lead terminations may differ from standard RoHS-compliant variants. Confirm that the TO-92-3 package dimensions match the target PCB footprint requirements before finalizing procurement orders.
Selection Notes
Select this component when a low-noise N-channel JFET with high input impedance is required for analog signal processing. Ensure the circuit design accommodates the 30 Ohm on-resistance and 625 mW power dissipation limits. Verify that the 40 V breakdown voltage provides sufficient margin for the intended supply voltages.
Part Context
This part belongs to the PN4391 series of N-channel JFETs produced by Central Semiconductor. It is functionally similar to other industry-standard JFETs like the 2N4391, though pinouts and specific parameters should be verified against the official Central Semiconductor datasheet. The TO-92-3 package is a common plastic encapsulation for discrete transistors.
Replacement Considerations
Cross-reference with Vishay's 2N4391 or SST4391 for potential functional equivalents, but verify pinout compatibility and parameter tolerances carefully. Other manufacturers' N-channel JFETs in TO-92 packages may serve as substitutes if electrical characteristics align with the application requirements.
