Single Bipolar Transistors PN5136 TIN/LEAD product image

PN5136 TIN/LEAD

$0.15
  • Description:20V 500MA 625MW TH TRANSISTOR-SM
  • Series:-

SKU:680b586c7387 Category: Brand:

  
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PN5136 TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 20V 500MA 625MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for PN5136 TIN/LEAD

  • Description:20V 500MA 625MW TH TRANSISTOR-SM
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 150mA, 1V
  • Power - Max:625 mW
  • Frequency - Transition:40MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for PN5136 TIN/LEAD

PN5136 TIN/LEAD

Single Bipolar Transistors Overview

The PN5136 is a silicon NPN bipolar junction transistor (BJT) manufactured by Central Semiconductor. It features a collector-emitter voltage of 20 V, a collector-base voltage of 30 V, and an emitter-base voltage of 3 V. The device supports a continuous collector current of 500 mA with a power dissipation rating of 1 W. Key electrical characteristics include a gain-bandwidth product of 40 MHz and a DC current gain ranging from 20 to 400 at 150 mA. It operates within a temperature range of -65°C to +150°C and is housed in a TO-92-3 through-hole package.

Single Bipolar Transistors Feature Summary

  • NPN silicon construction for reliable switching and amplification
  • High thermal stability supporting operation up to 150°C
  • Through-hole TO-92-3 packaging for standard board mounting

Single Bipolar Transistors Applications

  • General-purpose signal amplification circuits
  • Low-voltage switching applications
  • Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix required for tin/lead terminations, as availability may vary between bulk and tape-and-reel formats. Confirm RoHS compliance status if lead-free alternatives are mandated for the target assembly process. Cross-reference the manufacturer's latest datasheet to ensure the selected variant matches the required pinout and electrical tolerances for the design.

Single Bipolar Transistors Selection Notes

Select this component when a low-voltage NPN BJT with moderate current handling is required. The 20 V collector-emitter rating suits low-power logic interfacing. Ensure the application does not exceed the 1 W power dissipation limit without adequate heatsinking. Verify that the required current gain falls within the specified 20 to 400 range for the operating point.

Single Bipolar Transistors Part Context

This part belongs to Central Semiconductor's discrete bipolar transistor lineup, designed for general electronic applications. The PN5136 utilizes silicon planar technology to provide stable performance across wide temperature ranges. It is commonly used in consumer electronics and industrial control systems where cost-effective, through-hole transistors are preferred over surface-mount alternatives.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for equivalent NPN transistors with matching voltage and current ratings. Verify pin compatibility and thermal characteristics before swapping.

PN5136 TIN/LEADPN5136 TIN/LEAD
$0.15
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