PN5825 TIN/LEAD

Single Bipolar Transistors Overview

The PN5825 TIN/LEAD is a silicon NPN single bipolar junction transistor (BJT) manufactured by Central Semiconductor Corp. It features a collector-base voltage of 50 V, a collector-emitter voltage of 40 V, and an emitter-base voltage of 5 V. The device supports a continuous collector current of 10 mA with a power dissipation rating of 625 mW. Key electrical characteristics include a gain-bandwidth product of 90 MHz and a minimum DC current gain of 100 at 2 mA and 5 V. It operates within a temperature range of -65°C to +150°C and utilizes a TO-92-3 through-hole package.

Single Bipolar Transistors Feature Summary

• NPN polarity configuration for single switching and amplification applications
• High-frequency performance capability indicated by 90 MHz transition frequency
• Robust thermal operation extending up to 150°C junction temperature
• Standardized TO-92-3 through-hole mounting format

Single Bipolar Transistors Applications

• General-purpose signal amplification circuits
• Electronic switching applications requiring low current handling
• High-frequency analog circuit designs

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm lead-free status and tin-lead plating specifications. Confirm RoHS compliance details directly from the official datasheet prior to integration. Ensure the TO-92-3 package dimensions match the target PCB footprint requirements. Validate that the 10 mA collector current limit aligns with the intended circuit load conditions.

Single Bipolar Transistors Selection Notes

Select this component when a small-signal NPN transistor with moderate high-frequency response is required. The 40 V collector-emitter voltage provides sufficient headroom for low-voltage logic interfacing. Consider the 625 mW power dissipation limit for thermal management in enclosed environments. The TO-92-3 package is suitable for prototyping and low-volume production where through-hole reliability is prioritized over surface-mount density.

Single Bipolar Transistors Part Context

This part belongs to the PN5825 series of silicon NPN transistors produced by Central Semiconductor Corp. It is designed as a general-purpose discrete semiconductor device for use in consumer electronics and industrial control systems. The series emphasizes standard electrical parameters compatible with common BJT replacement strategies in legacy and modern circuit designs.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference data for verified substitutes. Ensure any alternative maintains matching NPN polarity, TO-92-3 packaging, and equivalent voltage/current ratings.