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The PN918 TRE TIN/LEAD is an NPN general-purpose switching bipolar junction transistor manufactured by Central Semiconductor. It utilizes silicon technology and is housed in a TO-92-3 through-hole package. Key electrical ratings include a maximum DC collector current of 50 mA, a collector-emitter voltage (VCEO) of 15 V, and a collector-base voltage (VCBO) of 30 V. The device features a minimum DC current gain (hFE) of 20 and a transition frequency (fT) of 600 MHz. Power dissipation is rated at 625 mW, with a collector-emitter saturation voltage of 400 mV. It operates within a temperature range of -65°C to +150°C.
Verify the specific ordering suffix against manufacturer documentation to confirm lead-free status and tin/lead plating specifications. Ensure the requested variant matches the required RoHS compliance level and packaging format. Cross-reference the manufacturer part number with distributor catalogs to confirm availability and correct component identification before finalizing procurement orders.
Select this component for designs requiring moderate switching speeds and low current handling capabilities. The TO-92-3 package facilitates easy prototyping and through-hole assembly. Consider the 15 V collector-emitter voltage limit when designing for higher voltage environments. Evaluate the 625 mW power dissipation rating to ensure adequate thermal management under continuous operating conditions.
This component belongs to the PN918 series of NPN silicon transistors produced by Central Semiconductor. It serves as a standard discrete semiconductor device for electronic circuit design. The series is engineered for reliability in consumer and industrial electronics applications requiring small-signal switching functions.
Consult official substitution guides for compatible NPN general-purpose transistors with similar voltage and current ratings. Verify pinout compatibility and thermal characteristics before implementing any alternative components in existing designs.