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Product Detailed Parameters
- Description：RF TRANS NPN 15V 600MHZ TO-92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：600MHz
- Noise Figure (dB Typ @ f)：6dB @ 60MHz
- Gain：15dB
- Power - Max：350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 3mA, 1V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The onsemi PN918 is an NPN RF transistor designed for amplifiers, oscillators, and multipliers. It operates with collector currents between 1.0 mA and 30 mA. Key electrical parameters include a collector-emitter voltage (VCEO) of 15 V, collector-base voltage (VCBO) of 30 V, and emitter-base voltage (VEBO) of 3.0 V. The device supports a continuous collector current of 50 mA and features a gain-bandwidth product (fT) of 600 MHz at 4.0 mA and 10 V. Power dissipation reaches 350 mW in the TO-92 package. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Optimized for RF amplifier, oscillator, and multiplier applications within specific collector current ranges.
- Provides high-frequency performance characterized by a 600 MHz gain-bandwidth product.
- Capable of operation across a wide temperature range up to 150°C junction temperature.
Applications
- RF Amplifiers
- Oscillators
- Frequency Multipliers
Procurement Notes
Verify the manufacturer origin carefully, as the datasheet indicates Fairchild Semiconductor history while the brand is listed as onsemi. Confirm the package type matches the design requirements, as the component is available in both TO-92 and SOT-23 configurations. Ensure the ordering suffix corresponds to the desired packaging style, such as bulk or tape and reel, before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring an NPN transistor for RF frequencies up to several hundred megahertz. The 15 V collector-emitter rating suits low-voltage RF stages. Verify that the required collector current falls within the 1.0 mA to 30 mA operational range for optimal noise figure and gain characteristics. Consider thermal management if operating near the maximum power dissipation limits.
Part Context
The PN918 is part of a family of NPN RF transistors originally developed by Fairchild Semiconductor. It shares functional similarities with other small-signal RF devices but is distinct in its specific gain-bandwidth and voltage ratings. The MMBT918 designation refers to the same device logic housed in a surface-mount SOT-23 package, whereas the PN918 typically denotes the through-hole TO-92 variant.
Replacement Considerations
The MMBT918 serves as a direct pin-compatible alternative in the SOT-23 package. Designers transitioning from TO-92 to SMD should verify thermal resistance differences and lead configuration alignment.
FAQ
What is the maximum collector-emitter voltage for the PN918?
The maximum collector-emitter voltage (VCEO) is 15 V.
At what frequency is the gain-bandwidth product specified?
The gain-bandwidth product (fT) of 600 MHz is specified at a frequency of 100 MHz.
What is the typical noise figure under standard test conditions?
The typical noise figure is 6.0 dB, measured at IC = 1.0 mA, VCE = 6.0 V, RG = 400Ω, and f = 60 MHz.
