PRF13750HR9

Overview

The PRF13750HR9 is an RF power LDMOS transistor manufactured by NXP Semiconductors. It is designed for high-power continuous wave (CW) applications across a frequency range of 700 MHz to 1.3 GHz. The device operates at a drain voltage of 50 V and delivers an output power of 750 W. Key electrical parameters include a gain of 20.5 dB, a maximum drain current of 2.8 A, and a power dissipation capability of 1.333 kW. The component supports dual N-channel configurations and functions within a temperature range of -40°C to +150°C.

Feature Summary

• Dual N-channel LDMOS architecture optimized for high-power RF amplification
• Wideband operational capability spanning 700 MHz to 1.3 GHz
• High thermal stability supporting operation up to 150°C junction temperature

Applications

• Base station power amplifiers in cellular infrastructure
• Broadband RF signal generation systems
• Industrial, Scientific, and Medical (ISM) equipment requiring high power output

Procurement Notes

Verify the specific suffix 'R9' against official NXP documentation to confirm reel packaging specifications and tape-and-reel dimensions. Ensure compatibility with NI-1230S-4 mounting requirements. Confirm RoHS compliance status and material declarations prior to procurement. Validate that the ordered part matches the active or end-of-life status indicated in current manufacturer catalogs.

Selection Notes

Select this component for designs requiring 750 W CW output power within the 700–1300 MHz band. Ensure the circuit design accommodates the 50 V operating voltage and 2.8 A drain current limits. Verify that the PCB layout supports the NI-1230S-4 package thermal management needs. Consider the 20.5 dB gain when designing matching networks for system efficiency.

Part Context

This part belongs to the MRF13750H series of RF power transistors from NXP Semiconductors. The series is characterized by high linearity and ruggedness suitable for demanding RF environments. The PRF13750HR9 variant specifically denotes the reel-packaged version of the standard MRF13750H device, maintaining identical electrical performance characteristics.

Replacement Considerations

Direct substitutes may include other NXP MRF13750H variants with different packaging suffixes, such as HS or H, provided the pinout and electrical specifications remain identical. Cross-reference with manufacturer replacement guides to ensure functional equivalence.