PRFX1K80HR5

Overview

The PRFX1K80HR5 is an LDMOS dual configuration RF MOSFET transistor manufactured by NXP USA Inc. It operates within a frequency range of 1.8 MHz to 470 MHz and supports a power output of 1800 W at a voltage of 65 V. The device utilizes NI-1230H-4S packaging technology, designed for high-power radio frequency applications requiring robust performance across wide bandwidths.

Feature Summary

• Dual configuration LDMOS technology for enhanced power handling
• Wide frequency range utilization from 1.8 MHz to 470 MHz
• High power capability supporting 1800 W operation

Applications

• Broadband RF power amplification
• Industrial heating and plasma generation systems
• Radio broadcasting transmitter stages

Procurement Notes

Verify the specific package type NI-1230H-4S against your PCB layout requirements. Confirm that the operating voltage and frequency ranges align with your system design specifications. Ensure thermal management solutions are adequate for 1800 W power dissipation. Check for any specific mounting torque requirements associated with the dual configuration structure.

Selection Notes

Select this component when high power output in the sub-GHz to VHF band is required. The dual configuration offers flexibility for push-pull or single-ended topologies. Consider the thermal resistance characteristics of the NI-1230H-4S package for heat sink integration. Evaluate the impedance matching network complexity relative to the wide frequency coverage.

Part Context

This part belongs to the high-power LDMOS family from NXP, designed for demanding RF applications. It complements other devices in the series by offering a balance between power density and frequency coverage. The dual structure allows for efficient circuit designs in broadcast and industrial sectors.

Replacement Considerations

Check for MRFX1K80HR5 as a potential variant. Verify pinout compatibility and electrical parameters before substitution. Ensure the replacement part meets the same 1800 W and 65 V specifications.