PSMB032N08NS1_R2_00601

$2.62

Description：80V/ 3.4MOHM / MV MOSFET
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4611f3b2dae5 Category: Single FETs, MOSFETs Brand: Panjit International Inc.

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Product introduction

PSMB032N08NS1_R2_00601 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is 80V/ 3.4MOHM / MV MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PSMB032N08NS1_R2_00601

Description：80V/ 3.4MOHM / MV MOSFET
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：161A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：7V, 10V
Rds On (Max) @ Id, Vgs：3.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：3.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：76 nC @ 7 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7430 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：156W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for PSMB032N08NS1_R2_00601

PSMB032N08NS1_R2_00601

Single FETs, MOSFETs Overview

The PSMB032N08NS1_R2_00601 is an N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It features a TO-263 (D2PAK-3) package and silicon technology. Key electrical parameters include a drain-source voltage of 80 V, continuous drain current of 161 A at 25°C case temperature, and a maximum on-resistance of 3.4 mΩ at VGS=10V and ID=50A. The device has a gate threshold voltage of 3.75 V max, total gate charge of 103.5 nC, and power dissipation of 156 W. Operating junction temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Compliant with EU RoHS 2.0 standards using lead-free construction
Utilizes green molding compound in accordance with IEC 61249 standard
Subjected to 100% avalanche testing for reliability verification
Undergoes 100% gate resistance testing during production

Single FETs, MOSFETs Applications

Battery Management Systems (BMS)
Brushless DC Motor (BLDC) drives
Switching Power Supply (SMPS) synchronous rectification

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required packaging format, as the component is available in both tube and reel configurations. Confirm that the application environment remains within the specified thermal limits and does not involve life-critical systems, as per manufacturer disclaimers. Ensure compatibility with the TO-263 footprint layout provided in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling capabilities within an 80V system. The low on-resistance supports efficient power conversion in synchronous rectifier circuits. Consider the thermal resistance characteristics when designing heat dissipation solutions for the TO-263 package to maintain safe operating temperatures under load.

Single FETs, MOSFETs Part Context

This part belongs to the PSM series of power MOSFETs produced by Panjit. It is designed for general-purpose power switching applications where low conduction losses are critical. The TO-263 package provides a balance between thermal performance and surface-mount convenience, suitable for automated assembly processes.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other Panjit parts in the PSM series sharing the same voltage rating and package type. Verify pinout compatibility and ensure that alternative components meet or exceed the required current and thermal specifications before substitution.