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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 40A LFPAK56D
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：40A (Ta)
- Rds On (Max) @ Id, Vgs：12.5mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：22.4nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：2953pF @ 25V
- Power - Max：64W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-1205, 8-LFPAK56
- Supplier Device Package：LFPAK56D
- Grade：-
- Qualification：-
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Overview
The Nexperia PSMN013-60HLX is a dual logic level N-channel MOSFET utilizing TrenchMOS technology in an LFPAK56D (SOT1205) package. It features a drain-source voltage of 60 V and a continuous drain current of 40 A at 25 °C. The typical on-state resistance is 12.5 mΩ at VGS = 5 V, reducing to 9 mΩ at VGS = 10 V. Total gate charge is 22.4 nC. The device supports a junction temperature range from -55 °C to 175 °C with a total power dissipation of 64 W.
Feature Summary
- Dual MOSFET configuration within a single high-reliability LFPAK56D package
- Logic level gate drive capability for efficient control at low voltages
- Repetitive avalanche rated for robust performance in demanding switching environments
- Qualified for operation up to 175 °C junction temperature
Applications
- Brushless DC motor control
- DC-to-DC converters
- High-performance synchronous rectification
- High efficiency server power supplies
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets RoHS compliance requirements for your target market. Cross-reference the marking code '13RL60H' with the datasheet to authenticate the physical device upon receipt.
Selection Notes
Select this component when a compact dual-N-channel solution is required for logic-level gate drive applications. The LFPAK56D package offers a small footprint suitable for space-constrained designs. Ensure the application operates within the 60 V drain-source voltage limit and utilizes appropriate thermal management to maintain junction temperatures below 175 °C during peak load conditions.
Part Context
This part belongs to the Nexperia PSMN series of silicon N-channel enhancement mode field-effect transistors. These devices are manufactured using TrenchMOS technology to achieve low on-state resistance and fast switching speeds. The series is designed for general-purpose switching applications in computing, communications, and industrial equipment sectors.
Replacement Considerations
Direct substitutes include other dual N-channel MOSFETs in the SOT1205/LFPAK56D package with comparable 60 V ratings and similar RDS(on) characteristics. Verify pinout compatibility and thermal resistance values before substitution.
FAQ
Is the PSMN013-60HLX automotive qualified?
No, unless explicitly stated otherwise in specific product announcements, this product is not automotive qualified and is intended for computing, communications, consumer, and industrial applications.
What is the maximum non-repetitive avalanche energy rating?
The device is rated for 82 mJ of non-repetitive drain-source avalanche energy under specified test conditions.
How does the on-state resistance vary with gate voltage?
At VGS = 5 V, the typical RDS(on) is 12.5 mΩ. At VGS = 10 V, the typical RDS(on) decreases to 9 mΩ.
