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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 42A LFPAK56D
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：42A (Ta)
- Rds On (Max) @ Id, Vgs：13.6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：19.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1160pF @ 25V
- Power - Max：46W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-1205, 8-LFPAK56
- Supplier Device Package：LFPAK56D
- Grade：-
- Qualification：-
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Overview
The Nexperia PSMN014-40HLDX is a dual logic level N-channel MOSFET utilizing NextPowerS3 technology in an LFPAK56D (Dual Power-SO8) package. It features a drain-source voltage of 40 V and a typical on-state resistance of 13.6 mΩ at VGS = 10 V. The device supports a continuous drain current of 42 A and total power dissipation of 46 W. Key dynamic parameters include a total gate charge of 19.4 nC and a gate-drain charge of 4.2 nC. It operates within a junction temperature range of -55 °C to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Dual MOSFET configuration in a single LFPAK56D package
- Repetitive avalanche rated for robust operation
- High reliability construction with copper-clip solder die attach
- Qualified for high-temperature environments up to 175 °C
Applications
- Brushless DC motor control
- DC-to-DC converters
- High-performance synchronous rectification
- High performance and high efficiency server power supply
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details, as suffixes may indicate variations in reel or tape specifications. Ensure the component matches the required LFPAK56D package outline SOT1205. Confirm that the application design accounts for thermal limitations and PCB layout requirements specified in the datasheet to maintain safe operating conditions.
Selection Notes
Select this component for designs requiring dual N-channel logic level MOSFETs in a compact surface-mount footprint. The low on-state resistance and high current capability make it suitable for efficient power conversion. Verify that the gate drive voltage aligns with the logic level characteristics to ensure optimal RDSon performance. Consider the thermal resistance and mounting base temperature constraints when designing the heat dissipation path.
Part Context
This part belongs to Nexperia's NextPowerS3 family, which employs advanced silicon technologies to minimize conduction and switching losses. The LFPAK56D package provides enhanced thermal performance and mechanical stability compared to standard packages. It is designed for industrial and commercial applications where high efficiency and reliability are critical.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
Is the PSMN014-40HLDX avalanche rated?
Yes, the device is repetitively avalanche rated, with a non-repetitive drain-source avalanche energy of 10.6 mJ under specified test conditions.
What is the maximum junction temperature for this MOSFET?
The maximum junction temperature is 175 °C, allowing for operation in high-temperature environments.
How many channels does the PSMN014-40HLDX contain?
It contains two independent N-channel MOSFETs (FET1 and FET2) integrated into a single LFPAK56D package.
