PSMN025-100HSX

$2.22

Description：MOSFET 2N-CH 100V 29.5A LFPAK56D
Series：-

SKU:e59462326d7b Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 100V 29.5A LFPAK56D
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：29.5A (Ta)
Rds On (Max) @ Id, Vgs：24.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：38.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2436pF @ 25V
Power - Max：68W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-1205, 8-LFPAK56
Supplier Device Package：LFPAK56D
Grade：-
Qualification：-

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PSMN025-100HSX

Overview

The Nexperia PSMN025-100HS is a dual standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56D (Dual Power-SO8) package. It features a drain-source voltage of 100 V and a continuous drain current of 29.5 A at 25 °C mounting base temperature. The typical on-state resistance is 24.5 mΩ at 25 °C junction temperature, rising to 68 mΩ at 175 °C. Total power dissipation reaches 68 W under specified conditions. The device supports a maximum junction temperature of 175 °C and includes integrated source-drain diodes with a recovered charge of 62.2 nC.

Feature Summary

High peak drain current capability for demanding load switching
Copper clip and flexible leads for enhanced thermal performance
Low body diode reverse recovery charge for reduced spiking
Superior reliability with high operating junction temperature rating

Applications

Synchronous rectifier circuits
Forward and flyback converters
Industrial drive systems
Power management systems
Uninterruptible Power Supply (UPS)

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets all required environmental compliance standards for the target application. Cross-reference the marking code '25RS10H' with the datasheet to validate authenticity upon receipt. Ensure design-in compatibility with the LFPAK56D footprint dimensions provided in the package outline section.

Selection Notes

Select this component when a dual N-channel configuration is required within a compact surface-mount footprint. The low on-state resistance and high current rating make it suitable for efficient power conversion stages. Consider the thermal resistance characteristics and the need for adequate heat sinking given the 175 °C junction temperature limit. Evaluate the gate charge requirements against the driving circuit capabilities to ensure optimal switching performance.

Part Context

This device belongs to Nexperia's standard level MOSFET portfolio, leveraging TrenchMOS technology for improved efficiency. The LFPAK56D package provides a robust solution for high-power applications requiring dual channels in a single housing. It is designed for industrial and commercial equipment where reliability and thermal performance are critical. The product data sheet defines its electrical characteristics and absolute maximum ratings for design integration.

Replacement Considerations

Consult the official Nexperia replacement guide or contact technical support for verified substitute part numbers. Do not assume pin-to-pin compatibility with other dual MOSFET packages without verifying electrical parameters and thermal characteristics against the original specification.