PSMN029-100HLX

Overview

The Nexperia PSMN029-100HLX is a dual logic level N-channel MOSFET utilizing TrenchMOS technology within an LFPAK56D (Dual Power-SO8) package. It features a drain-source voltage of 100 V and a continuous drain current of 30 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 29 mΩ at VGS = 5 V and supports a peak pulsed drain current of 118 A. Total power dissipation reaches 68 W, with an operating junction temperature range from -55 °C to 175 °C.

Feature Summary

• High peak drain current capability for demanding load conditions
• Copper clip construction with flexible leads for enhanced thermal performance
• Superior reliability supported by high operating junction temperature rating
• Low body diode reverse recovery charge for improved efficiency

Applications

• Synchronous rectifier circuits
• Forward and flyback converters
• Industrial drive systems
• Power management systems
• Uninterruptible Power Supply (UPS)

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm tape-and-reel specifications or packaging variations. Confirm that the LFPAK56D footprint matches your PCB design guidelines. Ensure thermal management strategies align with the specified junction-to-mounting base thermal resistance limits under expected operating conditions.

Selection Notes

Select this component when dual isolated channels are required in a compact surface-mount form factor. The logic level gate drive compatibility allows operation with standard 5 V control signals. Evaluate the avalanche energy rating if inductive load switching is present. Consider the low reverse recovery charge benefits for high-frequency synchronous rectification topologies.

Part Context

This device belongs to Nexperia's TrenchMOS portfolio, designed for high-efficiency power switching applications. The LFPAK56D package provides a balance between thermal dissipation capabilities and space-saving requirements. It serves as a robust solution for modern power conversion architectures requiring dual-channel integration.

Replacement Considerations

Consult official Nexperia substitution guides for verified equivalents. Cross-reference pinout configurations and thermal characteristics carefully when considering alternative manufacturers' components to ensure mechanical and electrical compatibility.

FAQ

What is the maximum non-repetitive drain-source avalanche energy?

The maximum non-repetitive drain-source avalanche energy is 83 mJ under specified test conditions.

Does the device support 5 V logic level gate drive?

Yes, the device is specified as a logic level MOSFET with on-state resistance characterized at VGS = 5 V.

What is the package type and lead count?

The component uses an LFPAK56D package, which corresponds to SOT1205, featuring eight leads.