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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 21.4A LFPAK56D
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：21.4A (Ta)
- Rds On (Max) @ Id, Vgs：37.6mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：25.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1533pF @ 25V
- Power - Max：53W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-1205, 8-LFPAK56
- Supplier Device Package：LFPAK56D
- Grade：-
- Qualification：-
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Overview
The Nexperia PSMN038-100HS is a dual standard level N-channel MOSFET utilizing TrenchMOS technology within an LFPAK56D (Dual Power-SO8) package. It features a drain-source voltage of 100 V and a continuous drain current of 21.4 A at 25 °C mounting base temperature. The typical on-state resistance is 37.6 mΩ at 25 °C, rising to 104 mΩ at 175 °C. Total gate charge is 25.9 nC, with a non-repetitive avalanche energy rating of 46 mJ. The device supports a junction temperature range from -55 °C to 175 °C and offers a total power dissipation of 53 W.
Feature Summary
- Incorporates copper clip and flexible leads for superior reliability and thermal performance.
- Supports high operating junction temperatures up to 175 °C.
- Features low body diode reverse recovery charge for efficient switching.
Applications
- Synchronous rectifier
- Forward and flyback converter
- Industrial drive
- Power management system
- Uninterruptible Power Supply (UPS)
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and availability. Confirm that the component meets all required environmental standards for the intended application. Ensure compatibility with the designated PCB footprint and soldering profile specified in the datasheet. Cross-reference the marking code '38RS10H' for accurate identification upon receipt.
Selection Notes
Select this component for applications requiring dual N-channel isolation in a compact surface-mount form factor. The LFPAK56D package provides enhanced thermal dissipation compared to standard SO-8 packages. Consider the 175 °C junction temperature capability for high-temperature environments. Evaluate the 37.6 mΩ on-resistance against efficiency requirements at the target operating current levels.
Part Context
This part belongs to Nexperia's TrenchMOS portfolio, designed for general-purpose power switching. The LFPAK56D package variant integrates two independent channels into a single 8-lead outline. It targets industrial and consumer power supplies where space constraints and thermal management are critical design factors.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Generic cross-references may not match the specific thermal or electrical characteristics of the TrenchMOS technology used in this dual-channel configuration.
FAQ
What is the maximum non-repetitive avalanche energy rating?
The non-repetitive drain-source avalanche energy is rated at 46 mJ under specified conditions.
How does the on-state resistance change with temperature?
The typical RDS(on) increases from 37.6 mΩ at 25 °C to 104 mΩ at 175 °C junction temperature.
What is the package type for this dual MOSFET?
It is housed in an LFPAK56D (Dual Power-SO8) plastic surface-mounted package, also known as SOT1205.
