PSMN045-100HLX

Overview

The Nexperia PSMN045-100HLX is a dual logic level N-channel MOSFET utilizing TrenchMOS technology within an LFPAK56D (SOT1205) package. It features two independent channels with a drain-source voltage of 100 V and a continuous drain current of 21 A at 25 °C mounting base temperature. The on-state resistance is typically 38.3 mΩ at VGS = 5 V and 25 °C, rising to 103 mΩ at 175 °C. Total gate charge is 18.5 nC, and the device supports a junction temperature up to 175 °C with a total power dissipation of 53 W.

Feature Summary

• Dual channel configuration in a single LFPAK56D package for space-efficient designs
• Logic level gate drive optimized for operation at VGS = 5 V
• High peak drain current capability supported by copper clip construction
• Enhanced thermal performance allowing operation up to 175 °C junction temperature

Applications

• Synchronous rectifier circuits
• Forward and flyback converters
• Industrial drive systems
• Power management systems
• Uninterruptible Power Supply (UPS)

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel quantity or packaging variant. Confirm that the component status remains in production as indicated in the datasheet. Ensure design-in compliance with the absolute maximum ratings provided. Check for any recent updates to the product specification or marking codes before finalizing procurement orders.

Selection Notes

Select this component when a compact dual-channel solution is required for 100 V applications. The logic level gate drive simplifies control circuitry compared to standard threshold devices. Evaluate the thermal resistance characteristics against the expected mounting base temperature to ensure adequate heat dissipation for the target power dissipation requirements.

Part Context

This part belongs to Nexperia's TrenchMOS portfolio, designed for high-efficiency switching applications. The LFPAK56D package provides a robust surface-mount footprint suitable for automated assembly. It serves as a dual-channel alternative to single discrete MOSFETs, reducing board space and component count in power conversion topologies.

Replacement Considerations

Direct pin-compatible replacements must be verified against the LFPAK56D outline dimensions. Ensure substitute parts meet the 100 V rating and 21 A current capacity. Verify that the replacement also supports logic level gate drive at 5 V if used in existing control architectures.

FAQ

What is the maximum junction temperature for the PSMN045-100HLX?

The maximum operating junction temperature is 175 °C.

How many independent channels does this package contain?

The LFPAK56D package contains two independent N-channel MOSFETs.

Is the gate drive compatible with 5 V logic levels?

Yes, the device is specified as a logic level MOSFET optimized for VGS = 5 V operation.