PSMN1R0-40SSHJ

Single FETs, MOSFETs Overview

The Nexperia PSMN1R0-40SSHJ is an N-channel enhancement mode MOSFET utilizing NextPowerS3 technology in an LFPAK88 (SOT1235) package. It features a drain-source voltage of 40 V and a continuous drain current capability of 325 A at Tmb = 25 °C. The typical on-state resistance (RDSon) is 0.88 mΩ at VGS = 10 V and ID = 25 A, with a maximum of 1 mΩ. Total gate charge (QG) is typically 98 nC. The device operates within a junction temperature range of -55 °C to +175 °C and has a total power dissipation rating of 375 W.

Single FETs, MOSFETs Feature Summary

• Utilizes unique SchottkyPlus technology for high efficiency and low spiking performance without problematic leakage currents.
• Features copper-clip and solder die attach construction for low package inductance, low resistance, and high current ratings.
• Includes avalanche rated design with 100% testing for robustness under transient conditions.
• Offers narrow VGS(th) rating to facilitate easy paralleling and improved current sharing.

Single FETs, MOSFETs Applications

• Brushless DC motor control
• Synchronous rectifier in high-power AC-DC applications such as server power supplies
• Battery protection circuits
• eFuse and load switch implementations
• Hotswap and in-rush current management

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'J' against official Nexperia documentation to confirm tape and reel specifications or marking details. Ensure the ordering part number matches the required package variant and compliance standards. Cross-reference the datasheet revision date to confirm the most recent electrical characteristics and thermal data are applied during design validation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring standard level gate drive compatibility with high current handling capabilities. The LFPAK88 package provides an ideal replacement footprint for D2PAK and 10x12 mm leadless types while offering superior thermal performance. Consider the 175 °C qualification and UL2595 creepage requirements for safety-critical industrial or server power supply environments.

Single FETs, MOSFETs Part Context

This device belongs to the Nexperia NextPowerS3 portfolio, which integrates Schottky-like switching performance into standard MOSFET structures. The LFPAK88 package is designed for surface mounting with exposed leads for optimal thermal dissipation and visual solder joint inspection. It targets high-efficiency applications operating at high switching frequencies and heavy load currents.

Single FETs, MOSFETs Replacement Considerations

Officially documented as an ideal replacement for D2PAK and 10 x 12 mm leadless package types. Verify pinout compatibility and thermal resistance differences when substituting legacy packages in existing PCB layouts.