PSMN2R6-40YS/2X

Single FETs, MOSFETs Overview

The PSMN2R6-40YS is a standard level N-channel MOSFET in an LFPAK (SOT669) package, rated for a drain-source voltage of 40 V and junction temperatures up to 175 °C. It utilizes Advanced TrenchMOS technology to achieve low on-state resistance and gate charge. Key electrical parameters include a maximum drain current of 100 A at 25 °C mounting base temperature, total power dissipation of 131 W, and a typical RDSon of 2.8 mΩ at 25 °C. The device supports non-repetitive avalanche energy of 179 mJ.

Single FETs, MOSFETs Feature Summary

• Advanced TrenchMOS technology provides low on-state resistance and reduced gate charge for improved efficiency.
• LFPAK packaging delivers high power density with enhanced mechanical stability and thermal performance.
• Qualified for operation at junction temperatures up to 175 °C, suitable for thermally demanding environments.

Single FETs, MOSFETs Applications

• DC-to-DC converters
• Lithium-ion battery protection circuits
• Load switching applications
• Motor control systems
• Server power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and reel specifications. Confirm that the component status remains active for new designs, as product availability may change. Ensure compatibility with the SOT669 footprint during PCB layout validation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high current handling in compact form factors. The low thermal resistance facilitates efficient heat dissipation in dense layouts. Evaluate the gate charge requirements against driver capabilities to optimize switching speeds and minimize losses in power conversion stages.

Single FETs, MOSFETs Part Context

This part belongs to Nexperia's LFPAK series of surface-mounted power MOSFETs. The LFPAK package integrates a large copper clip for superior thermal management compared to traditional plastic packages. This design supports industrial, communications, and domestic equipment applications requiring robust power switching.

Single FETs, MOSFETs Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout configurations and thermal characteristics when evaluating potential replacements to ensure circuit compatibility without redesigning the mounting base or gate drive network.