Single FETs, MOSFETs PSMN4R5-30YLC,115 product image

PSMN4R5-30YLC,115

$0.65
  • Description:MOSFET N-CH 30V 84A LFPAK56
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:722099ba35f9 Category: Brand:

  
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PSMN4R5-30YLC,115 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 30V 84A LFPAK56. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PSMN4R5-30YLC,115

  • Description:MOSFET N-CH 30V 84A LFPAK56
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:84A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:4.8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:1.95V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:20.5 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1324 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):61W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:LFPAK56, Power-SO8
  • Package / Case:SC-100, SOT-669

Single FETs, MOSFETs datasheet and documents for PSMN4R5-30YLC,115

PSMN4R5-30YLC,115

Single FETs, MOSFETs Overview

The PSMN4R5-30YLC,115 is a logic level enhancement mode N-channel MOSFET utilizing NextPower Superjunction technology in an LFPAK (SOT669) package. It features a drain-source voltage of 30 V and a typical on-state resistance of 4.8 mΩ at VGS=10V. The device supports a continuous drain current of 84 A at Tmb=25°C and dissipates up to 61 W. Operating junction temperature ranges from -55°C to +175°C. Key dynamic characteristics include a total gate charge of 9.6 nC at VGS=4.5V and low parasitic inductance.

Single FETs, MOSFETs Feature Summary

  • Optimized for 4.5V gate drive applications using NextPower Superjunction technology
  • Ultra-low gate charge and output capacitance for high system efficiency across load ranges
  • Low parasitic inductance and resistance inherent to the Power SO8 package design
  • Qualified for operation at junction temperatures up to 175°C

Single FETs, MOSFETs Applications

  • DC-to-DC converters
  • Load switching
  • Power OR-ing
  • Server power supplies
  • Synchronous rectifier

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring efficient logic-level gate drive compatibility at 4.5V. The low RDS(on) and QG values make it suitable for high-frequency switching applications where minimizing conduction and switching losses is critical. Ensure thermal management accounts for the 61 W dissipation limit at 25°C mounting base temperature.

Single FETs, MOSFETs Part Context

This part belongs to Nexperia's PSMN series of N-channel MOSFETs designed for industrial and communications equipment. The LFPAK package provides robust surface-mount capabilities with a large mounting base connected to the drain for effective heat dissipation. It represents a balance between low on-resistance and fast switching performance for general-purpose power management.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the SOT669 package, 30V VDS rating, and comparable RDS(on) and QG specifications. Verify that any substitute also supports 4.5V logic level drive and operates within the -55°C to +175°C junction temperature range to ensure pinout and thermal compatibility.

PSMN4R5-30YLC,115PSMN4R5-30YLC,115
$0.65
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